Part Details for STB6N52K3 by STMicroelectronics
Overview of STB6N52K3 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for STB6N52K3
STB6N52K3 CAD Models
STB6N52K3 Part Data Attributes
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STB6N52K3
STMicroelectronics
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Datasheet
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STB6N52K3
STMicroelectronics
5A, 525V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | D2PAK | |
Package Description | D2PAK-3 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 110 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 525 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STB6N52K3
This table gives cross-reference parts and alternative options found for STB6N52K3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB6N52K3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STB6N62K3 | POWER, FET | STMicroelectronics | STB6N52K3 vs STB6N62K3 |
FQB6N70 | Power Field-Effect Transistor, 6.2A I(D), 700V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | STB6N52K3 vs FQB6N70 |
STD6N62K3 | N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in DPAK | STMicroelectronics | STB6N52K3 vs STD6N62K3 |
FQB6N70TM | 6.2A, 700V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | STB6N52K3 vs FQB6N70TM |
FQB6N70TM_NL | Power Field-Effect Transistor, 6.2A I(D), 700V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | STB6N52K3 vs FQB6N70TM_NL |
STB9NK70ZT4 | 7.5A, 700V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | STB6N52K3 vs STB9NK70ZT4 |