-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in I2PAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
57P0608
|
Newark | Hv Mosfet Planar |Stmicroelectronics STB4NK60Z-1 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
DISTI #
497-12536-5-ND
|
DigiKey | MOSFET N-CH 600V 4A I2PAK Min Qty: 2000 Lead time: 13 Weeks Container: Tube | Limited Supply - Call |
|
$0.3871 | Buy Now |
DISTI #
STB4NK60Z-1
|
Avnet Americas | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK T/R - Rail/Tube (Alt: STB4NK60Z-1) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube | 0 |
|
$0.3917 / $0.4086 | Buy Now |
DISTI #
511-STB4NK60Z-1
|
Mouser Electronics | MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A RoHS: Compliant | 0 |
|
$0.3850 / $0.3870 | Order Now |
|
Future Electronics | STB4NK60 Series 600 V 4 A 70 W Through Hole N-Ch Power MOSFET - I2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 13 Weeks Container: Tube | 0Tube |
|
$0.3800 / $0.4150 | Buy Now |
|
Future Electronics | STB4NK60 Series 600 V 4 A 70 W Through Hole N-Ch Power MOSFET - I2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 13 Weeks Container: Tube | 0Tube |
|
$0.3800 / $0.4150 | Buy Now |
|
Chip 1 Exchange | INSTOCK | 1938 |
|
RFQ | |
DISTI #
STB4NK60Z-1
|
Avnet Silica | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK T/R (Alt: STB4NK60Z-1) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
DISTI #
STB4NK60Z-1
|
EBV Elektronik | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK T/R (Alt: STB4NK60Z-1) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
Sense Electronic Company Limited | TO-262 | 942 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STB4NK60Z-1
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STB4NK60Z-1
STMicroelectronics
N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in I2PAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-262AA | |
Package Description | TO-262, I2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STB4NK60Z-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB4NK60Z-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STB4NK60Z | 4A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | STMicroelectronics | STB4NK60Z-1 vs STB4NK60Z |
STD4NK60Z | 4A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | STB4NK60Z-1 vs STD4NK60Z |
R6004CNDTL | Power Field-Effect Transistor, 4A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN | ROHM Semiconductor | STB4NK60Z-1 vs R6004CNDTL |