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Part Details for STB36NM60N by STMicroelectronics
Overview of STB36NM60N by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STB36NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-12972-1-ND
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DigiKey | MOSFET N-CH 600V 29A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
946 In Stock |
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$3.4440 / $6.8900 | Buy Now |
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STMicroelectronics | Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 | 0 |
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$4.0900 / $6.4900 | Buy Now |
Part Details for STB36NM60N
STB36NM60N CAD Models
STB36NM60N Part Data Attributes
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STB36NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB36NM60N
STMicroelectronics
Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 345 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 116 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB36NM60N
This table gives cross-reference parts and alternative options found for STB36NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB36NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STB34NM60N | N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in D2PAK package | STMicroelectronics | STB36NM60N vs STB34NM60N |
| IPI60R099CPAXK | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | STB36NM60N vs IPI60R099CPAXK |
| IPB65R110CFDAATMA1 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | Infineon Technologies AG | STB36NM60N vs IPB65R110CFDAATMA1 |
| IPB65R110CFDATMA2 | Power Field-Effect Transistor, TO-263, D2PAK-3 | Infineon Technologies AG | STB36NM60N vs IPB65R110CFDATMA2 |
| TK25N60X | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | Toshiba America Electronic Components | STB36NM60N vs TK25N60X |
| SP000088490 | Power Field-Effect Transistor, | Infineon Technologies AG | STB36NM60N vs SP000088490 |
| TK28N65W5,S1F | Power Field-Effect Transistor | Toshiba America Electronic Components | STB36NM60N vs TK28N65W5,S1F |
| SIHH26N60E-T1-GE3 | Power Field-Effect Transistor, 25A I(D), 600V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 | Vishay Intertechnologies | STB36NM60N vs SIHH26N60E-T1-GE3 |
| IPI60R099CPXKSA1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | STB36NM60N vs IPI60R099CPXKSA1 |
| STL32N55M5 | 26A, 550V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, 8 X 8 MM, ROHS COMPLIANT, POWERFLAT-5 | STMicroelectronics | STB36NM60N vs STL32N55M5 |