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Transistors / Power Field-Effect Transistors / STB36NM60N
Datasheets
STB36NM60N by: STMicroelectronics

Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package

Part Details for STB36NM60N by STMicroelectronics

Results Overview of STB36NM60N by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

STB36NM60N Information

STB36NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB36NM60N

Part # Distributor Description Stock Price Buy
DISTI # 497-12972-1-ND
DigiKey MOSFET N-CH 600V 29A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 814
In Stock
  • 1 $8.0300
  • 10 $5.4590
  • 100 $4.0062
  • 500 $3.4440
  • 1,000 $3.4440
$3.4440 / $8.0300 Buy Now
DISTI # STB36NM60N
Avnet Americas Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D?PAK T/R - Tape and Reel (Alt: STB36NM60N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Reel 0
RFQ
STMicroelectronics Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 0
  • 1 $6.4900
  • 10 $5.5600
  • 25 $5.2700
  • 100 $4.6400
  • 250 $4.4900
  • 500 $4.0900
$4.0900 / $6.4900 Buy Now
DISTI # STB36NM60N
Avnet Silica Trans MOSFET NCH 600V 29A 3Pin2Tab DPAK TR (Alt: STB36NM60N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STB36NM60N
EBV Elektronik Trans MOSFET NCH 600V 29A 3Pin2Tab DPAK TR (Alt: STB36NM60N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STB36NM60N

STB36NM60N CAD Models

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STB36NM60N Part Data Attributes

Parametric Data
STB36NM60N STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB36NM60N STMicroelectronics Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 345 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 29 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 116 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB36NM60N

This table gives cross-reference parts and alternative options found for STB36NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB36NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FCP099N65S3 onsemi $4.2700 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-220, TO-220-3, 800-TUBE STB36NM60N vs FCP099N65S3
IPL65R070C7 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 28A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4 STB36NM60N vs IPL65R070C7
TK25V60X Toshiba America Electronic Components Check for Price Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V STB36NM60N vs TK25V60X
STW36NM60N STMicroelectronics Check for Price N-channel 600 V, 0.092 Ohm, 29 A MDmesh(TM) II Power MOSFET in TO-247 STB36NM60N vs STW36NM60N
IPB65R110CFD Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 STB36NM60N vs IPB65R110CFD
IPB60R099CS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN STB36NM60N vs IPB60R099CS
IPB65R110CFD7 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 22A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 STB36NM60N vs IPB65R110CFD7
IPP60R099CPXKSA1 Infineon Technologies AG $3.9272 Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN STB36NM60N vs IPP60R099CPXKSA1
IPB60R099CPATMA1 Infineon Technologies AG $3.9932 Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STB36NM60N vs IPB60R099CPATMA1
IPB65R110CFDATMA1 Infineon Technologies AG $3.6511 Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 STB36NM60N vs IPB65R110CFDATMA1

STB36NM60N Related Parts

STB36NM60N Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STB36NM60N is -40°C to 150°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 60V.

  • The recommended gate resistor value for the STB36NM60N is between 10Ω and 100Ω, depending on the specific application and switching frequency.

  • Yes, the STB36NM60N is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.

  • To protect the STB36NM60N from overvoltage and overcurrent, use a voltage regulator or a TVS diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.