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Part Details for STB32NM50N by STMicroelectronics
Overview of STB32NM50N by STMicroelectronics
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STB32NM50N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
07AH6949
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Newark | Mosfet, N-Ch, 500V, 22A, 190W, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:22A, Drain Source Voltage Vds:500V, On Resistance Rds(On):0.1Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Stmicroelectronics STB32NM50N RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$2.8300 | Buy Now |
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DISTI #
497-13264-1-ND
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DigiKey | MOSFET N CH 500V 22A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$1.9089 / $5.1600 | Buy Now |
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DISTI #
STB32NM50N
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Avnet Americas | Trans MOSFET N-CH 500V 22A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB32NM50N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$1.8180 / $1.9089 | Buy Now |
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DISTI #
511-STB32NM50N
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Mouser Electronics | MOSFETs N-Ch 500V 0.1 Ohm 22A MDmesh II RoHS: Compliant | 492 |
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$1.9000 / $4.4400 | Buy Now |
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STMicroelectronics | N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 | 492 |
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$1.9300 / $5.1700 | Buy Now |
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Future Electronics | N-Channel 500 V 130 mOhm SMT MDmesh II Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$1.8300 / $2.1900 | Buy Now |
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Future Electronics | N-Channel 500 V 130 mOhm SMT MDmesh II Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel | 0Reel |
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$1.6700 / $1.7100 | Buy Now |
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Future Electronics | N-Channel 500 V 130 mOhm SMT MDmesh II Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel | 0Reel |
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$1.6700 / $1.7100 | Buy Now |
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DISTI #
STB32NM50N
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TME | Transistor: N-MOSFET, unipolar, 500V, 22A, Idm: 88A, 190W, D2PAK Min Qty: 1 | 0 |
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$1.9600 / $3.8200 | RFQ |
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DISTI #
STB32NM50N
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Avnet Silica | Trans MOSFET N-CH 500V 22A 3-Pin(2+Tab) D2PAK T/R (Alt: STB32NM50N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for STB32NM50N
STB32NM50N CAD Models
STB32NM50N Part Data Attributes
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STB32NM50N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB32NM50N
STMicroelectronics
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-263, D2PAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB32NM50N
This table gives cross-reference parts and alternative options found for STB32NM50N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB32NM50N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB50R140CP | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STB32NM50N vs IPB50R140CP |