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Part Details for STB30N65DM6AG by STMicroelectronics
Overview of STB30N65DM6AG by STMicroelectronics
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STB30N65DM6AG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
69AJ1062
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Newark | Mosfet, N-Ch, 650V, 28A, To-263 Rohs Compliant: Yes |Stmicroelectronics STB30N65DM6AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4860 |
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$4.3800 / $6.8900 | Buy Now |
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DISTI #
497-STB30N65DM6AGCT-ND
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DigiKey | AUTOMOTIVE-GRADE N-CHANNEL 650 V Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
878 In Stock |
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$2.9494 / $7.1400 | Buy Now |
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DISTI #
STB30N65DM6AG
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Avnet Americas | Transistor MOSFET N-CH 650V 28A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB30N65DM6AG) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$2.6367 | Buy Now |
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DISTI #
511-STB30N65DM6AG
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Mouser Electronics | MOSFETs N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET Automotive-grade RoHS: Compliant | 952 |
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$2.9400 / $6.1000 | Buy Now |
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STMicroelectronics | Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 | 952 |
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$2.8900 / $5.9800 | Buy Now |
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Future Electronics | 650V,28A,102 mOhm DPAK Automotive RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel | 0Reel |
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$2.8200 | Buy Now |
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Future Electronics | 650V,28A,102 mOhm DPAK Automotive RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel | 0Reel |
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$2.8200 | Buy Now |
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DISTI #
STB30N65DM6AG
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Avnet Silica | Transistor MOSFET N-CH 650V 28A 3-Pin D2PAK T/R (Alt: STB30N65DM6AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STB30N65DM6AG
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EBV Elektronik | Transistor MOSFET N-CH 650V 28A 3-Pin D2PAK T/R (Alt: STB30N65DM6AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
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|
LCSC | 650V 28A 115m10A10V 223W 4.75V250uA 1 N-Channel D2PAK(TO-263) MOSFETs ROHS | 5 |
|
$4.4288 / $4.7178 | Buy Now |
Part Details for STB30N65DM6AG
STB30N65DM6AG CAD Models
STB30N65DM6AG Part Data Attributes
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STB30N65DM6AG
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB30N65DM6AG
STMicroelectronics
Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 600 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.115 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.5 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 223 W | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |