Part Details for STB25NM50N-1 by STMicroelectronics
Results Overview of STB25NM50N-1 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Automotive
STB25NM50N-1 Information
STB25NM50N-1 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STB25NM50N-1
STB25NM50N-1 CAD Models
STB25NM50N-1 Part Data Attributes
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STB25NM50N-1
STMicroelectronics
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Datasheet
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STB25NM50N-1
STMicroelectronics
22A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-262AA | |
| Package Description | TO-262, I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 350 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB25NM50N-1
This table gives cross-reference parts and alternative options found for STB25NM50N-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB25NM50N-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STB25NM50N-1 vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STB25NM50N-1 vs IPB80N06S2LH5ATMA1 |
| NTP15N40 | onsemi | Check for Price | 15A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | STB25NM50N-1 vs NTP15N40 |
| IRF610B_FP001 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN | STB25NM50N-1 vs IRF610B_FP001 |
| PHD3055L | NXP Semiconductors | Check for Price | 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | STB25NM50N-1 vs PHD3055L |
| FDP18N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | STB25NM50N-1 vs FDP18N50 |
| IXTK74N20 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 74A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | STB25NM50N-1 vs IXTK74N20 |
| STD3NM50T4 | STMicroelectronics | Check for Price | 3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | STB25NM50N-1 vs STD3NM50T4 |
| IXTQ26N50P | IXYS Corporation | $2.9605 | Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | STB25NM50N-1 vs IXTQ26N50P |
| STP3LN62K3 | STMicroelectronics | Check for Price | 2.5A, 620V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STB25NM50N-1 vs STP3LN62K3 |
STB25NM50N-1 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STB25NM50N-1 is not explicitly stated in the datasheet, but it can be determined by consulting the application notes and thermal design guidelines provided by STMicroelectronics. Typically, the SOA is defined by the maximum current and voltage ratings, as well as the thermal impedance of the device.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including proper heat sinking, thermal interface materials, and airflow management. Additionally, the device should be operated within the specified temperature range, and the junction temperature should be monitored to prevent overheating.
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The recommended PCB layout and design for optimal performance can be found in the application notes and design guidelines provided by STMicroelectronics. Key considerations include minimizing parasitic inductance and capacitance, using a solid ground plane, and ensuring proper decoupling and filtering.
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To protect the STB25NM50N-1 from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures, including the use of ESD-safe materials, grounding straps, and ionizers. Additionally, the device should be handled in a controlled environment with minimal humidity and temperature fluctuations.
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The recommended gate drive circuits and components for the STB25NM50N-1 can be found in the application notes and design guidelines provided by STMicroelectronics. Typically, a gate driver IC with a suitable voltage rating and current capability is required, along with a bootstrap capacitor and resistor network.