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Transistors / Power Field-Effect Transistors / STB24N60M2
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STB24N60M2 by:

N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package

Part Details for STB24N60M2 by STMicroelectronics

Overview of STB24N60M2 by STMicroelectronics

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Applications Automotive

Price & Stock for STB24N60M2

Part # Distributor Description Stock Price Buy
DISTI # 51AC9538
Newark Mosfet, N-Ch, 600V, 18A, To-262, Transistor Polarity:N Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.168Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipationrohs Compliant: Yes |Stmicroelectronics STB24N60M2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 180
  • 1 $3.1000
  • 10 $2.6100
  • 25 $2.4500
  • 50 $2.2800
  • 100 $2.1100
  • 250 $1.9900
  • 500 $1.8800
$1.8800 / $3.1000 Buy Now
DISTI # 497-13575-1-ND
DigiKey MOSFET N-CH 600V 18A D2PAK Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $2.8400
  • 10 $2.3820
  • 100 $1.9271
  • 500 $1.7130
  • 1,000 $1.4667
  • 2,000 $1.3811
  • 5,000 $1.3250
$1.3250 / $2.8400 Buy Now
DISTI # STB24N60M2
Avnet Americas Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB24N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.5741
  • 2,000 $1.5423
  • 4,000 $1.5105
  • 6,000 $1.4787
  • 8,000 $1.4469
  • 10,000 $1.4151
  • 100,000 $1.3833
$1.3833 / $1.5741 Buy Now
DISTI # 511-STB24N60M2
Mouser Electronics MOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2 RoHS: Compliant 1677
  • 1 $2.9000
  • 10 $2.4300
  • 100 $1.9700
  • 500 $1.7500
  • 1,000 $1.5000
  • 2,000 $1.3800
  • 5,000 $1.3200
$1.3200 / $2.9000 Buy Now
STMicroelectronics N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 1689
  • 1 $2.7700
  • 10 $2.3300
  • 25 $2.2000
  • 100 $1.8800
  • 250 $1.7700
  • 500 $1.6800
$1.6800 / $2.7700 Buy Now
Future Electronics STB24 Series 600 V 18 A 190 mOhm 150 W 29 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 1,000 $1.3800
  • 2,000 $1.3600
  • 3,000 $1.3400
$1.3400 / $1.3800 Buy Now
Future Electronics STB24 Series 600 V 18 A 190 mOhm 150 W 29 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 1,000 $1.3800
  • 2,000 $1.3600
  • 3,000 $1.3400
$1.3400 / $1.3800 Buy Now
Ameya Holding Limited N-Channel 600 V 0.19 Ohm 29 nC Surface Mount Mosfet - TO-263 (D2PAK) 1677
RFQ
DISTI # STB24N60M2
Avnet Silica Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: STB24N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 7000
Buy Now
DISTI # STB24N60M2
EBV Elektronik Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: STB24N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STB24N60M2

STB24N60M2 CAD Models

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STB24N60M2 Part Data Attributes

Parametric Data
STB24N60M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB24N60M2 STMicroelectronics N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB24N60M2

This table gives cross-reference parts and alternative options found for STB24N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB24N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TK17N65W Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components STB24N60M2 vs TK17N65W

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