Part Details for STB18NM60ND by STMicroelectronics
Results Overview of STB18NM60ND by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Renewable Energy
Automotive
STB18NM60ND Information
STB18NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB18NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
511-STB18NM60ND
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Mouser Electronics | MOSFETs N-CH 600V 0.25Ohm 13A FDmesh II RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
70520569
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RS | STB18NM60ND N-channel MOSFET Transistor, 13 A, 600 V, 3-Pin D2PAK Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.3000 / $1.5300 | RFQ |
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Bristol Electronics | 5 |
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RFQ | ||
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DISTI #
STB18NM60ND
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Avnet Silica | Trans MOSFET NCH 600V 13A 3Pin D2PAK TR (Alt: STB18NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 43 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STB18NM60ND
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EBV Elektronik | Trans MOSFET NCH 600V 13A 3Pin D2PAK TR (Alt: STB18NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STB18NM60ND
STB18NM60ND CAD Models
STB18NM60ND Part Data Attributes
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STB18NM60ND
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB18NM60ND
STMicroelectronics
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-263, D2PAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 187 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB18NM60ND
This table gives cross-reference parts and alternative options found for STB18NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB18NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP18NM60ND | STMicroelectronics | Check for Price | N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package | STB18NM60ND vs STP18NM60ND |
| STW18NM60ND | STMicroelectronics | Check for Price | N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package | STB18NM60ND vs STW18NM60ND |
STB18NM60ND Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STB18NM60ND is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and avoiding thermal hotspots.
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The maximum current rating for the STB18NM60ND is 18A, but it's essential to consider the device's thermal limitations and ensure proper cooling to avoid overheating.
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To protect the STB18NM60ND from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and ensure that your manufacturing process includes ESD protection measures.
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Yes, the STB18NM60ND is suitable for high-frequency switching applications, but it's essential to consider the device's switching characteristics, including rise and fall times, and ensure proper layout and decoupling to minimize electromagnetic interference (EMI).