Datasheets
STB18NM60N by:

13A, 600V, 0.285ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Part Details for STB18NM60N by STMicroelectronics

Overview of STB18NM60N by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for STB18NM60N

Part # Distributor Description Stock Price Buy
Bristol Electronics   241
RFQ
Quest Components   192
  • 1 $3.4240
  • 81 $1.7120
  • 176 $1.5836
$1.5836 / $3.4240 Buy Now
Chip1Cloud N-channel 600 V, 0.26 �� typ., 13 A MDmesh? II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 | MOSFET N-CH 600V 13A D2PAK 2000
RFQ
DISTI # 2098125
Farnell MOSFET, N CH, 600V, 13A, D2PAK RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 0
  • 1 $2.2367
  • 25 $2.0105
  • 100 $1.9225
  • 250 $1.4199
  • 500 $1.3948
  • 2,000 $1.3822
  • 4,000 $1.3696
  • 6,000 $1.3445
$1.3445 / $2.2367 Buy Now

Part Details for STB18NM60N

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STB18NM60N Part Data Attributes:

STB18NM60N STMicroelectronics
Buy Now Datasheet
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STB18NM60N STMicroelectronics 13A, 600V, 0.285ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 350 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.285 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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