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Transistors / Power Field-Effect Transistors / STB18N60M2
Datasheets
STB18N60M2 by: STMicroelectronics

N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package

Part Details for STB18N60M2 by STMicroelectronics

Results Overview of STB18N60M2 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

STB18N60M2 Information

STB18N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB18N60M2

Part # Distributor Description Stock Price Buy
DISTI # 497-13933-1-ND
DigiKey MOSFET N-CH 600V 13A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1668
In Stock
  • 1 $2.5800
  • 10 $1.9180
  • 100 $1.4602
  • 500 $1.1866
  • 1,000 $1.0486
  • 2,000 $0.9996
  • 3,000 $0.9834
$0.9834 / $2.5800 Buy Now
DISTI # STB18N60M2
Avnet Americas Trans MOSFET N-CH 600V 13A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB18N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9620
  • 2,000 $0.9560
  • 4,000 $0.9383
  • 6,000 $0.9212
  • 8,000 $0.9048
$0.9048 / $0.9620 Buy Now
DISTI # 511-STB18N60M2
Mouser Electronics MOSFETs N-CH 600V 0.255Ohm 13A MDmesh M2 RoHS: Compliant 1146
  • 1 $2.5300
  • 10 $1.8800
  • 100 $1.4900
  • 500 $1.2500
  • 1,000 $1.0700
  • 2,000 $1.0200
  • 5,000 $0.9870
$0.9870 / $2.5300 Buy Now
DISTI # E02:0323_07296522
Arrow Electronics Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Date Code: 2502 Europe - 2000
  • 1,000 $1.1244
$1.1244 Buy Now
STMicroelectronics N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 1146
  • 1 $2.4800
  • 10 $1.8400
  • 25 $1.8400
  • 100 $1.4600
  • 250 $1.4600
  • 500 $1.2300
$1.2300 / $2.4800 Buy Now
Future Electronics STB18 Series 600 V 13 A 280 mOhm 110 W 21.5 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel 0
Reel
  • 1,000 $0.9900
  • 2,000 $0.9750
  • 3,000 $0.9700
  • 4,000 $0.9600
$0.9600 / $0.9900 Buy Now
DISTI # 87697775
Verical Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2502 Americas - 2000
  • 1,000 $1.0851
$1.0851 Buy Now
DISTI # STB18N60M2
Avnet Silica Trans MOSFET NCH 600V 13A 3Pin D2PAK TR (Alt: STB18N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Silica - 1000
Buy Now
DISTI # STB18N60M2
Avnet Silica Trans MOSFET NCH 600V 13A 3Pin D2PAK TR (Alt: STB18N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 1000
Buy Now
DISTI # STB18N60M2
EBV Elektronik Trans MOSFET NCH 600V 13A 3Pin D2PAK TR (Alt: STB18N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 1702
RFQ
Win Source Electronics Low gate input resistance | MOSFET N-CH 600V D2PAK 5970
  • 35 $2.3739
  • 80 $1.9479
  • 120 $1.8870
  • 165 $1.8261
  • 215 $1.7654
  • 285 $1.5827
$1.5827 / $2.3739 Buy Now

Part Details for STB18N60M2

STB18N60M2 Part Data Attributes

Parametric Data
STB18N60M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB18N60M2 STMicroelectronics N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 135 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 52 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB18N60M2

This table gives cross-reference parts and alternative options found for STB18N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB18N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STI18N60M2 STMicroelectronics Check for Price N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in I2PAK package STB18N60M2 vs STI18N60M2
R6015ENJTL ROHM Semiconductor Check for Price Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN STB18N60M2 vs R6015ENJTL
IXKH13N60C5 IXYS Corporation Check for Price Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN STB18N60M2 vs IXKH13N60C5
IXKP13N60C5 IXYS Corporation Check for Price Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN STB18N60M2 vs IXKP13N60C5
TK15E60U Toshiba America Electronic Components Check for Price TRANSISTOR POWER, FET, FET General Purpose Power STB18N60M2 vs TK15E60U
IXKH13N60C5 Littelfuse Inc Check for Price Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN STB18N60M2 vs IXKH13N60C5
IPB60R280C6ATMA1 Infineon Technologies AG $0.9649 Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STB18N60M2 vs IPB60R280C6ATMA1
IXKP13N60C5 Littelfuse Inc Check for Price Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN STB18N60M2 vs IXKP13N60C5

STB18N60M2 Related Parts

STB18N60M2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STB18N60M2 is -40°C to 150°C.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.

  • The recommended gate resistor value for the STB18N60M2 is between 10Ω and 100Ω, depending on the specific application and switching frequency.

  • Yes, the STB18N60M2 is suitable for high-reliability applications due to its robust design and manufacturing process. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specifications.

  • To protect the STB18N60M2 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the device is stored in an anti-static bag or tube, and avoid touching the pins or leads during handling.