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Transistors / Power Field-Effect Transistors / STB18N55M5
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STB18N55M5 by:

N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh M5 Power MOSFET in D2PAK package

Part Details for STB18N55M5 by STMicroelectronics

Overview of STB18N55M5 by STMicroelectronics

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for STB18N55M5

Part # Distributor Description Stock Price Buy
DISTI # STB18N55M5
Avnet Americas Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB18N55M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
RFQ
Bristol Electronics   Min Qty: 1 40
  • 1 $6.7200
  • 5 $4.3680
  • 13 $3.3600
  • 39 $3.1362
$3.1362 / $6.7200 Buy Now
Quest Components   32
  • 1 $9.0000
  • 2 $6.0000
  • 5 $4.5000
$4.5000 / $9.0000 Buy Now
DISTI # STB18N55M5
Avnet Americas Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB18N55M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
RFQ
Chip1Cloud MOSFET N-CH 550V 13A D2PAK 12000
RFQ
DISTI # 2098124
Farnell MOSFET, N CH, 550V, 13A, D2PAK RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 1 Days Container: Each 0
  • 1 $1.9052
  • 25 $1.6169
  • 100 $1.4791
  • 250 $1.4038
  • 500 $1.3662
  • 2,000 $1.3412
  • 4,000 $1.3286
  • 6,000 $1.3161
$1.3161 / $1.9052 Buy Now

Part Details for STB18N55M5

STB18N55M5 CAD Models

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STB18N55M5 Part Data Attributes:

Parametric Data
STB18N55M5 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB18N55M5 STMicroelectronics N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh M5 Power MOSFET in D2PAK package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 550 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.24 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 52 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB18N55M5

This table gives cross-reference parts and alternative options found for STB18N55M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB18N55M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STD18N55M 13A, 550V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 STMicroelectronics STB18N55M5 vs STD18N55M
IPP60R250CP Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STB18N55M5 vs IPP60R250CP

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