Datasheets
STB18N20 by: STMicroelectronics

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-2

Part Details for STB18N20 by STMicroelectronics

Overview of STB18N20 by STMicroelectronics

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Applications Industrial Automation Renewable Energy Robotics and Drones

Part Details for STB18N20

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STB18N20 Part Data Attributes:

STB18N20 STMicroelectronics
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STB18N20 STMicroelectronics 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-2
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description D2PAK-2
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 50 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 70 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-on Time-Max (ton) 135 ns

Alternate Parts for STB18N20

This table gives cross-reference parts and alternative options found for STB18N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB18N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STB18N20T4 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-2 STMicroelectronics STB18N20 vs STB18N20T4
Part Number Description Manufacturer Compare
IRF640S/T3 TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power NXP Semiconductors STB18N20 vs IRF640S/T3
BUK456-200A TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors STB18N20 vs BUK456-200A
2SK1620(S)TR Power Field-Effect Transistor, 10A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd STB18N20 vs 2SK1620(S)TR
FQB19N20C Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET onsemi STB18N20 vs FQB19N20C
IRF640SPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies STB18N20 vs IRF640SPBF
IRF642 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor STB18N20 vs IRF642
FQB19N20TM Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 Fairchild Semiconductor Corporation STB18N20 vs FQB19N20TM
IRF640STRLPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier STB18N20 vs IRF640STRLPBF
BUZ30A Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STB18N20 vs BUZ30A
IRF641 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC STB18N20 vs IRF641

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