Datasheets
STB18N20-1 by: STMicroelectronics

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

Part Details for STB18N20-1 by STMicroelectronics

Overview of STB18N20-1 by STMicroelectronics

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Applications Industrial Automation Renewable Energy Robotics and Drones

Part Details for STB18N20-1

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STB18N20-1 Part Data Attributes

STB18N20-1 STMicroelectronics
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STB18N20-1 STMicroelectronics 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 50 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 70 pF
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-on Time-Max (ton) 135 ns

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