Part Details for STB180N55F3 by STMicroelectronics
Results Overview of STB180N55F3 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STB180N55F3 Information
STB180N55F3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB180N55F3
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1035 |
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RFQ |
Part Details for STB180N55F3
STB180N55F3 CAD Models
STB180N55F3 Part Data Attributes
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STB180N55F3
STMicroelectronics
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Datasheet
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STB180N55F3
STMicroelectronics
120A, 55V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | ROHS COMPLIANT, D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 330 W | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
STB180N55F3 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the STB180N55F3 is not explicitly stated in the datasheet, but it can be determined by consulting the application notes and thermal design guidelines provided by STMicroelectronics. Typically, the SOA is defined by the maximum allowed voltage and current combinations, taking into account the device's thermal limitations.
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To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet and application notes. This typically includes setting the gate-source voltage (Vgs) and drain-source voltage (Vds) within the recommended ranges, and ensuring the device is operated within its specified temperature range.
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The recommended PCB layout and thermal management strategy for the STB180N55F3 can be found in the application notes and thermal design guidelines provided by STMicroelectronics. This typically includes using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good thermal conductivity between the device and the surrounding environment.
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To handle ESD protection for the STB180N55F3, follow the recommended ESD handling and protection guidelines outlined in the datasheet and application notes. This typically includes using ESD-sensitive handling procedures, such as grounding oneself before handling the device, and using ESD protection devices or circuits in the application.
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The reliability and lifetime expectations for the STB180N55F3 can be found in the datasheet and reliability reports provided by STMicroelectronics. This typically includes information on the device's mean time to failure (MTTF), failure rate, and expected lifetime under various operating conditions.