Datasheets
STB180N55F3 by: STMicroelectronics

120A, 55V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3

Part Details for STB180N55F3 by STMicroelectronics

Results Overview of STB180N55F3 by STMicroelectronics

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STB180N55F3 Information

STB180N55F3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB180N55F3

Part # Distributor Description Stock Price Buy
Bristol Electronics   1035
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Part Details for STB180N55F3

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STB180N55F3 Part Data Attributes

STB180N55F3 STMicroelectronics
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STB180N55F3 STMicroelectronics 120A, 55V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 1000 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 330 W
Pulsed Drain Current-Max (IDM) 480 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

STB180N55F3 Related Parts

STB180N55F3 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) of the STB180N55F3 is not explicitly stated in the datasheet, but it can be determined by consulting the application notes and thermal design guidelines provided by STMicroelectronics. Typically, the SOA is defined by the maximum allowed voltage and current combinations, taking into account the device's thermal limitations.

  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet and application notes. This typically includes setting the gate-source voltage (Vgs) and drain-source voltage (Vds) within the recommended ranges, and ensuring the device is operated within its specified temperature range.

  • The recommended PCB layout and thermal management strategy for the STB180N55F3 can be found in the application notes and thermal design guidelines provided by STMicroelectronics. This typically includes using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good thermal conductivity between the device and the surrounding environment.

  • To handle ESD protection for the STB180N55F3, follow the recommended ESD handling and protection guidelines outlined in the datasheet and application notes. This typically includes using ESD-sensitive handling procedures, such as grounding oneself before handling the device, and using ESD protection devices or circuits in the application.

  • The reliability and lifetime expectations for the STB180N55F3 can be found in the datasheet and reliability reports provided by STMicroelectronics. This typically includes information on the device's mean time to failure (MTTF), failure rate, and expected lifetime under various operating conditions.