Datasheets
STB16NK60Z-S by: STMicroelectronics

14A, 600V, 0.42ohm, N-CHANNEL, Si, POWER, MOSFET, I2SPAK-3

Part Details for STB16NK60Z-S by STMicroelectronics

Results Overview of STB16NK60Z-S by STMicroelectronics

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STB16NK60Z-S Information

STB16NK60Z-S by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

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Part Details for STB16NK60Z-S

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STB16NK60Z-S Part Data Attributes

STB16NK60Z-S STMicroelectronics
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STB16NK60Z-S STMicroelectronics 14A, 600V, 0.42ohm, N-CHANNEL, Si, POWER, MOSFET, I2SPAK-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 360 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.42 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 190 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB16NK60Z-S

This table gives cross-reference parts and alternative options found for STB16NK60Z-S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB16NK60Z-S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FMI16N60E Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 16A I(D), 600V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN STB16NK60Z-S vs FMI16N60E
FMP16N60E Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 16A I(D), 600V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN STB16NK60Z-S vs FMP16N60E
APT6041CLL Advanced Power Technology Check for Price Power Field-Effect Transistor, 14A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN STB16NK60Z-S vs APT6041CLL
15N65L-T47-T Unisonic Technologies Co Ltd Check for Price Power Field-Effect Transistor, 15A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, LEAD FREE PACKAGE-3 STB16NK60Z-S vs 15N65L-T47-T
15N65G-T47-T Unisonic Technologies Co Ltd Check for Price Power Field-Effect Transistor, 15A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE PACKAGE-3 STB16NK60Z-S vs 15N65G-T47-T