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Transistors / Power Field-Effect Transistors / STB12NM50N
Datasheets
STB12NM50N by: STMicroelectronics

11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3

Part Details for STB12NM50N by STMicroelectronics

Results Overview of STB12NM50N by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

STB12NM50N Information

STB12NM50N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB12NM50N

Part # Distributor Description Stock Price Buy
Bristol Electronics   902
RFQ
Bristol Electronics   154
RFQ

Part Details for STB12NM50N

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STB12NM50N Part Data Attributes

Parametric Data
STB12NM50N STMicroelectronics
Buy Now Datasheet
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STB12NM50N STMicroelectronics 11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 350 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB12NM50N

This table gives cross-reference parts and alternative options found for STB12NM50N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB12NM50N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STB12NM50NT4 STMicroelectronics Check for Price 11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK, 3 PIN STB12NM50N vs STB12NM50NT4
SPI12N50C3HKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 STB12NM50N vs SPI12N50C3HKSA1
SPB12N50C3E3045A Infineon Technologies AG Check for Price Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STB12NM50N vs SPB12N50C3E3045A
STB12NM50-1 STMicroelectronics Check for Price 12A, 500V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STB12NM50N vs STB12NM50-1
SIHP12N50E-GE3 Vishay Intertechnologies $0.4148 Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 STB12NM50N vs SIHP12N50E-GE3
SPB12N50C3AT Infineon Technologies AG Check for Price Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STB12NM50N vs SPB12N50C3AT
SHD208505 Sensitron Semiconductors Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN STB12NM50N vs SHD208505

STB12NM50N Related Parts

STB12NM50N Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) of the STB12NM50N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.

  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal interface material to reduce the thermal resistance, and ensure good airflow around the device. You can also use thermal simulation tools to estimate the device's temperature and optimize your design accordingly.

  • The recommended PCB layout for the STB12NM50N is not explicitly stated in the datasheet, but general guidelines for power MOSFETs apply. Keep the drain and source pins as close as possible to minimize inductance, use a solid ground plane, and ensure good thermal conductivity between the device and the PCB. You can also consult application notes and reference designs from STMicroelectronics for guidance.

  • The STB12NM50N is a power MOSFET designed for high-voltage and high-current applications, but its high-frequency performance is limited by its internal capacitances and switching characteristics. While it can be used in high-frequency switching applications, it's essential to carefully evaluate the device's switching losses, ringing, and oscillations to ensure reliable operation. You may need to add external components, such as snubbers or gate resistors, to optimize the device's performance.

  • To protect the STB12NM50N from ESD, follow standard ESD handling and protection guidelines. Use ESD-safe materials and tools, ground yourself before handling the device, and ensure the device is properly packaged and stored. You can also add external ESD protection components, such as TVS diodes or ESD protection arrays, to your design to further protect the device.