Part Details for STB12NM50FD by STMicroelectronics
Overview of STB12NM50FD by STMicroelectronics
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Part Details for STB12NM50FD
STB12NM50FD CAD Models
STB12NM50FD Part Data Attributes
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STB12NM50FD
STMicroelectronics
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Datasheet
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STB12NM50FD
STMicroelectronics
12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB12NM50FD
This table gives cross-reference parts and alternative options found for STB12NM50FD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB12NM50FD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPB12N50C3 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB12NM50FD vs SPB12N50C3 |
| SIHP12N50E-GE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | STB12NM50FD vs SIHP12N50E-GE3 |
| STB12NM50-1 | 12A, 500V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | STB12NM50FD vs STB12NM50-1 |
| STB12NM50N | 11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | STB12NM50FD vs STB12NM50N |
| SPI12N50C3HKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | STB12NM50FD vs SPI12N50C3HKSA1 |
| SHD208505 | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Sensitron Semiconductors | STB12NM50FD vs SHD208505 |
| SPB12N50C3AT | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB12NM50FD vs SPB12N50C3AT |
| STB12NM50NT4 | 11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK, 3 PIN | STMicroelectronics | STB12NM50FD vs STB12NM50NT4 |
| SPW12N50C3FKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STB12NM50FD vs SPW12N50C3FKSA1 |