Datasheets
STB120N4F6 by: STMicroelectronics

N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package

Part Details for STB120N4F6 by STMicroelectronics

Overview of STB120N4F6 by STMicroelectronics

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for STB120N4F6

Part # Distributor Description Stock Price Buy
DISTI # 21T3977
Newark Lv Mosfet Trench |Stmicroelectronics STB120N4F6 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 497-10768-1-ND
DigiKey MOSFET N-CH 40V 80A D2PAK Min Qty: 1 Lead time: 39 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 944
In Stock
  • 1 $2.3300
  • 10 $1.9340
  • 100 $1.5392
  • 500 $1.3024
  • 1,000 $1.1050
  • 2,000 $1.0498
  • 5,000 $1.0103
  • 10,000 $0.9769
$0.9769 / $2.3300 Buy Now
DISTI # STB120N4F6
Avnet Americas Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB120N4F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 39 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.1605
  • 2,000 $1.1371
  • 4,000 $1.1136
  • 6,000 $1.0902
  • 8,000 $1.0668
  • 10,000 $1.0433
  • 100,000 $1.0199
$1.0199 / $1.1605 Buy Now
DISTI # 511-STB120N4F6
Mouser Electronics MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE RoHS: Compliant 1804
  • 1 $2.3300
  • 10 $1.4600
  • 100 $1.2800
  • 500 $1.1800
  • 1,000 $1.0400
  • 2,000 $1.0100
$1.0100 / $2.3300 Buy Now
STMicroelectronics N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 1804
  • 1 $2.2800
  • 10 $1.4300
  • 100 $1.2500
  • 250 $1.2500
  • 500 $1.1600
$1.1600 / $2.2800 Buy Now
Future Electronics N-Channel 40 V 4 mOhm STripFET VI Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 2000
Reel
  • 1,000 $0.9050
  • 2,000 $0.8650
$0.8650 / $0.9050 Buy Now
Future Electronics N-Channel 40 V 4 mOhm STripFET VI Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.0700
  • 2,000 $1.0500
  • 3,000 $1.0300
  • 4,000 $1.0300
  • 5,000 $0.9900
$0.9900 / $1.0700 Buy Now
Future Electronics N-Channel 40 V 4 mOhm STripFET VI Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.0700
  • 2,000 $1.0500
  • 3,000 $1.0300
  • 4,000 $1.0300
  • 5,000 $0.9900
$0.9900 / $1.0700 Buy Now
Future Electronics N-Channel 40 V 4 mOhm STripFET VI Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.0700
  • 2,000 $1.0500
  • 3,000 $1.0300
  • 4,000 $1.0300
  • 5,000 $0.9900
$0.9900 / $1.0700 Buy Now
Ameya Holding Limited N-Channel 40 V 4 mOhm Surface Mount STripFET VI Power MosFet - D2PAK 198000
RFQ
DISTI # STB120N4F6
Avnet Silica Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R (Alt: STB120N4F6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 1000
Buy Now

Part Details for STB120N4F6

STB120N4F6 CAD Models

STB120N4F6 Part Data Attributes:

STB120N4F6 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB120N4F6 STMicroelectronics N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 39 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 394 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB120N4F6

This table gives cross-reference parts and alternative options found for STB120N4F6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB120N4F6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STB170NF04 Automotive-grade N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK package STMicroelectronics STB120N4F6 vs STB170NF04
STB95N3LLH6 80A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics STB120N4F6 vs STB95N3LLH6
STB95N4LF3 80A, 40V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics STB120N4F6 vs STB95N4LF3
STB50N25M5 28A, 250V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics STB120N4F6 vs STB50N25M5
STB80N20M5 N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package STMicroelectronics STB120N4F6 vs STB80N20M5
STB90N55F4 90A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics STB120N4F6 vs STB90N55F4

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