Part Details for STB10NB50 by STMicroelectronics
Overview of STB10NB50 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STB10NB50
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 263 |
|
$1.4235 / $3.2850 | Buy Now |
Part Details for STB10NB50
STB10NB50 CAD Models
STB10NB50 Part Data Attributes
|
STB10NB50
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STB10NB50
STMicroelectronics
10.6A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | D2PAK | |
Package Description | D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 550 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 10.6 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 135 W | |
Pulsed Drain Current-Max (IDM) | 42.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STB10NB50
This table gives cross-reference parts and alternative options found for STB10NB50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB10NB50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFS11N50ATRL | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | STB10NB50 vs IRFS11N50ATRL |
SSF7NS65G | Power Field-Effect Transistor, 7A I(D), 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3 | Suzhou Good-Ark Electronics Co Ltd | STB10NB50 vs SSF7NS65G |
SIHP7N60E-E3 | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | STB10NB50 vs SIHP7N60E-E3 |
SPI07N60S5HKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | STB10NB50 vs SPI07N60S5HKSA1 |
IRFS11N50ATRRPBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | STB10NB50 vs IRFS11N50ATRRPBF |
IRFS11N50ATRRP | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | STB10NB50 vs IRFS11N50ATRRP |
IRFS11N50APBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | Vishay Intertechnologies | STB10NB50 vs IRFS11N50APBF |
IRFS11N50ATRLP | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | STB10NB50 vs IRFS11N50ATRLP |
RM8N650T2 | Power Field-Effect Transistor, 8A I(D), 650V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220-3L-C, 3 PIN | Rectron Semiconductor | STB10NB50 vs RM8N650T2 |
SPI07N60C3HKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | STB10NB50 vs SPI07N60C3HKSA1 |