Datasheets
SSW7N60BTM by:

Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Part Details for SSW7N60BTM by Fairchild Semiconductor Corporation

Overview of SSW7N60BTM by Fairchild Semiconductor Corporation

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for SSW7N60BTM

Part # Distributor Description Stock Price Buy
DISTI # 2156-SSW7N60BTM-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 417 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 697
In Stock
  • 417 $0.7200
$0.7200 Buy Now
Rochester Electronics 7A, 600V, 1.2ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 697
RFQ

Part Details for SSW7N60BTM

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SSW7N60BTM Part Data Attributes

SSW7N60BTM Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
SSW7N60BTM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 420 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 147 W
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SSW7N60BTM

This table gives cross-reference parts and alternative options found for SSW7N60BTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSW7N60BTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SSW7N60B Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation SSW7N60BTM vs SSW7N60B
Part Number Description Manufacturer Compare
FK7VS-12 Power Field-Effect Transistor, 7A I(D), 600V, 1.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Powerex Power Semiconductors SSW7N60BTM vs FK7VS-12
IRFBC40STRRPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier SSW7N60BTM vs IRFBC40STRRPBF
IRFBC20S Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3 International Rectifier SSW7N60BTM vs IRFBC20S
2SK3889-01S Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fuji Electric Co Ltd SSW7N60BTM vs 2SK3889-01S
STB9NK60ZD 7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STMicroelectronics SSW7N60BTM vs STB9NK60ZD
IRFBC40SPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SSW7N60BTM vs IRFBC40SPBF
SSW2N60BTM Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation SSW7N60BTM vs SSW2N60BTM
FQB4N60 Power Field-Effect Transistor, 4.4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation SSW7N60BTM vs FQB4N60
2SK3299-ZJ Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN NEC Electronics Group SSW7N60BTM vs 2SK3299-ZJ
STB3NK60ZT4 N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in D2PAK package STMicroelectronics SSW7N60BTM vs STB3NK60ZT4

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