Part Details for SST29EE020-120-4C-PH by Silicon Storage Technology
Results Overview of SST29EE020-120-4C-PH by Silicon Storage Technology
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SST29EE020-120-4C-PH Information
SST29EE020-120-4C-PH by Silicon Storage Technology is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for SST29EE020-120-4C-PH
SST29EE020-120-4C-PH CAD Models
SST29EE020-120-4C-PH Part Data Attributes
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SST29EE020-120-4C-PH
Silicon Storage Technology
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Datasheet
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SST29EE020-120-4C-PH
Silicon Storage Technology
Flash, 256KX8, 120ns, PDIP32, 0.600 INCH, PLASTIC, MO-015AP, DIP-32
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SILICON STORAGE TECHNOLOGY INC | |
Part Package Code | DIP | |
Package Description | 0.600 INCH, PLASTIC, MO-015AP, DIP-32 | |
Pin Count | 32 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Access Time-Max | 120 ns | |
Command User Interface | NO | |
Data Polling | YES | |
JESD-30 Code | R-PDIP-T32 | |
JESD-609 Code | e0 | |
Length | 41.91 mm | |
Memory Density | 2097152 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 32 | |
Number of Words | 262144 words | |
Number of Words Code | 256000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 256KX8 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | DIP | |
Package Equivalence Code | DIP32,.6 | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Page Size | 128 words | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 240 | |
Programming Voltage | 5 V | |
Qualification Status | Not Qualified | |
Seated Height-Max | 5.08 mm | |
Standby Current-Max | 0.00005 A | |
Supply Current-Max | 0.05 mA | |
Supply Voltage-Max (Vsup) | 5.5 V | |
Supply Voltage-Min (Vsup) | 4.5 V | |
Supply Voltage-Nom (Vsup) | 5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Pitch | 2.54 mm | |
Terminal Position | DUAL | |
Toggle Bit | YES | |
Width | 15.24 mm | |
Write Cycle Time-Max (tWC) | 10 ms |
SST29EE020-120-4C-PH Frequently Asked Questions (FAQ)
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The SST29EE020-120-4C-PH has a minimum of 100,000 erase cycles per sector, and a minimum of 10,000 erase cycles per block.
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The HOLD# pin should be driven low to pause the current operation, and driven high to resume the operation. It's recommended to use the HOLD# pin to pause the operation during power-down or power-up sequences.
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The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. The device should be in a standby mode during power-up.
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The device's status can be determined by monitoring the RY/BY# pin, which goes low during a write or erase operation and returns high when the operation is complete.
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The WP# pin is a write protect pin that prevents writing to the status register. To use it, drive WP# low to enable write protection, and drive WP# high to disable write protection.