There are no models available for this part yet.
Overview of SSS4N60AS by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 3 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for SSS4N60AS by Samsung Semiconductor
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Quest Components | MOSFET Transistor, N-Channel, TO-220AB(FP) | 31 |
|
Buy Now |
CAD Models for SSS4N60AS by Samsung Semiconductor
Part Data Attributes for SSS4N60AS by Samsung Semiconductor
|
|
---|---|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code
|
TO-220F
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
260 mJ
|
Case Connection
|
ISOLATED
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
2.3 A
|
Drain-source On Resistance-Max
|
2.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
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Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
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Power Dissipation-Max (Abs)
|
33 W
|
Pulsed Drain Current-Max (IDM)
|
9 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Element Material
|
SILICON
|
Alternate Parts for SSS4N60AS
This table gives cross-reference parts and alternative options found for SSS4N60AS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSS4N60AS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2SK1572 | Power Field-Effect Transistor, 5ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN | Hitachi Ltd | SSS4N60AS vs 2SK1572 |
SSP4N60AS | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | SSS4N60AS vs SSP4N60AS |
SSP4N60A | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | SSS4N60AS vs SSP4N60A |