Part Details for SSP1N60A by Fairchild Semiconductor Corporation
Overview of SSP1N60A by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Education and Research
Environmental Monitoring
Industrial Automation
Audio and Video Systems
Agriculture Technology
Medical Imaging
Electronic Manufacturing
Entertainment and Gaming
Price & Stock for SSP1N60A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-SSP1N60A-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 2664 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
5115 In Stock |
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$0.1100 | Buy Now |
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Rochester Electronics | SSP1N60A - 1A, 600V, 12ohm, N-Channel Power MOSFET, TO-220AB ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 5115 |
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$0.0967 / $0.1138 | Buy Now |
Part Details for SSP1N60A
SSP1N60A CAD Models
SSP1N60A Part Data Attributes
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SSP1N60A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
SSP1N60A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 44 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 34 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SSP1N60A
This table gives cross-reference parts and alternative options found for SSP1N60A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSP1N60A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFP70N06 | N-Channel Power MOSFET 60V, 70A, 14mΩ, 800-TUBE | onsemi | SSP1N60A vs RFP70N06 |
| RFP8P06LE | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | SSP1N60A vs RFP8P06LE |
| RFP2N12L | 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SSP1N60A vs RFP2N12L |
| RFP45N06_NL | 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SSP1N60A vs RFP45N06_NL |
| RFG70N06 | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Harris Semiconductor | SSP1N60A vs RFG70N06 |
| RFP70N06 | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | SSP1N60A vs RFP70N06 |
| RFP15P06 | 15A, 60V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | SSP1N60A vs RFP15P06 |
| RFP12N06RLE | Power Field-Effect Transistor, 12A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | SSP1N60A vs RFP12N06RLE |
| SPW47N60S5 | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | SSP1N60A vs SPW47N60S5 |
| SMW70N06-14 | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Vishay Siliconix | SSP1N60A vs SMW70N06-14 |