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Power Field-Effect Transistor, 2A I(D), 100V, 0.142ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SSM6N815RLFCT-ND
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DigiKey | MOSFET 2N-CH 100V 2A 6TSOPF Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.1212 / $0.4200 | Buy Now |
DISTI #
SSM6N815R,LF
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Avnet Americas | Trans MOSFET N-CH 100V 2A 6-Pin TSOP Emboss T/R - Tape and Reel (Alt: SSM6N815R,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.1242 / $0.1484 | Buy Now |
DISTI #
757-SSM6N815RLF
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Mouser Electronics | MOSFET LowON Res MOSFET ID=2A VDSS=100V RoHS: Compliant | 0 |
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$0.1210 / $0.4200 | Order Now |
DISTI #
SSM6N815R,LF
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Avnet Americas | Trans MOSFET N-CH 100V 2A 6-Pin TSOP Emboss T/R - Tape and Reel (Alt: SSM6N815R,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.1242 / $0.1484 | Buy Now |
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NexGen Digital | 2 |
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RFQ | ||
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Chip 1 Exchange | INSTOCK | 2379 |
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RFQ | |
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Chip1Cloud | 5440 |
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RFQ |
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SSM6N815R,LF
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM6N815R,LF
Toshiba America Electronic Components
Power Field-Effect Transistor, 2A I(D), 100V, 0.142ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | TSOP-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 10.1 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 0.142 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 16 pF | |
JESD-30 Code | R-PDSO-F6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.4 W | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |