Part Details for SSM6N7002KFU,LXH by Toshiba America Electronic Components
Overview of SSM6N7002KFU,LXH by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SSM6N7002KFU,LXH
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
264-SSM6N7002KFULXHCT-ND
|
DigiKey | MOSFET 2N-CH 60V 0.3A US6 Min Qty: 1 Lead time: 40 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
10844 In Stock |
|
$0.0563 / $0.3900 | Buy Now |
|
DISTI #
SSM6N7002KFU,LXH
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 300mA 6-Pin SOT-363 Emboss T/R - Tape and Reel (Alt: SSM6N7002KFU,LXH) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 36 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
|
DISTI #
757-SSM6N7002KFULXH
|
Mouser Electronics | MOSFETs SMOS 2 in 1 Dual Nch High ESD protected RoHS: Compliant | 4592 |
|
$0.0560 / $0.2800 | Buy Now |
Part Details for SSM6N7002KFU,LXH
SSM6N7002KFU,LXH CAD Models
SSM6N7002KFU,LXH Part Data Attributes
|
|
SSM6N7002KFU,LXH
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
SSM6N7002KFU,LXH
Toshiba America Electronic Components
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 1.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.3 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |