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Part Details for SSM6N67NU,LF by Toshiba America Electronic Components
Overview of SSM6N67NU,LF by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SSM6N67NU,LF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SSM6N67NULFCT-ND
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DigiKey | MOSFET 2N-CH 30V 4A 6DFN Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
18025 In Stock |
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$0.1013 / $0.6000 | Buy Now |
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DISTI #
SSM6N67NU,LF
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Avnet Americas | Trans MOSFET Array N-CH 30V 4A 6-Pin UDFN - Tape and Reel (Alt: SSM6N67NU,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.1038 / $0.1241 | Buy Now |
|
DISTI #
757-SSM6N67NULF
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Mouser Electronics | MOSFETs LowON Res MOSFET ID=4A VDSS=30V RoHS: Compliant | 94025 |
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$0.1010 / $0.4500 | Buy Now |
Part Details for SSM6N67NU,LF
SSM6N67NU,LF CAD Models
SSM6N67NU,LF Part Data Attributes
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SSM6N67NU,LF
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM6N67NU,LF
Toshiba America Electronic Components
Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | UDFN-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 1 Day | |
| Samacsys Manufacturer | Toshiba | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.0391 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |