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Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
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SSM6K809R | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
264-SSM6K809RLXHFCT-ND
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DigiKey | AUTO AEC-Q SS MOS N-CH LOGIC-LEV Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
6371 In Stock |
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$0.2250 / $0.8200 | Buy Now |
DISTI #
SSM6K809R,LXHF
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Avnet Americas | Transistor MOSFET N-Channel 60V 6A 6-Pin TSOP6F - Tape and Reel (Alt: SSM6K809R,LXHF) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 36 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
757-SSM6K809RLXHF
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Mouser Electronics | MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F RoHS: Compliant | 38849 |
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$0.2380 / $0.7600 | Buy Now |
DISTI #
SSM6K809R,LXHF
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EBV Elektronik | Transistor MOSFET N-Channel 60V 6A 6-Pin TSOP (Alt: SSM6K809R,LXHF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SSM6K809R,LXHF
Toshiba America Electronic Components
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Datasheet
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SSM6K809R,LXHF
Toshiba America Electronic Components
Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | TSOP-6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 19.5 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.036 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 35 pF | |
JESD-30 Code | R-PDSO-F6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |