Datasheets
SSM6K809R,LXHF by: Toshiba America Electronic Components

Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for SSM6K809R,LXHF by Toshiba America Electronic Components

Overview of SSM6K809R,LXHF by Toshiba America Electronic Components

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101

Price & Stock for SSM6K809R,LXHF

Part # Distributor Description Stock Price Buy
DISTI # 264-SSM6K809RLXHFCT-ND
DigiKey AUTO AEC-Q SS MOS N-CH LOGIC-LEV Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6371
In Stock
  • 1 $0.8200
  • 10 $0.5480
  • 100 $0.3768
  • 500 $0.2992
  • 1,000 $0.2737
  • 3,000 $0.2408
  • 6,000 $0.2250
$0.2250 / $0.8200 Buy Now
DISTI # SSM6K809R,LXHF
Avnet Americas Transistor MOSFET N-Channel 60V 6A 6-Pin TSOP6F - Tape and Reel (Alt: SSM6K809R,LXHF) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 36 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 757-SSM6K809RLXHF
Mouser Electronics MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F RoHS: Compliant 38849
  • 1 $0.7600
  • 10 $0.6130
  • 100 $0.4140
  • 250 $0.4130
  • 500 $0.3320
  • 1,000 $0.2930
  • 3,000 $0.2560
  • 6,000 $0.2420
  • 9,000 $0.2380
$0.2380 / $0.7600 Buy Now
DISTI # SSM6K809R,LXHF
EBV Elektronik Transistor MOSFET N-Channel 60V 6A 6-Pin TSOP (Alt: SSM6K809R,LXHF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SSM6K809R,LXHF

SSM6K809R,LXHF CAD Models

SSM6K809R,LXHF Part Data Attributes

SSM6K809R,LXHF Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
SSM6K809R,LXHF Toshiba America Electronic Components Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description TSOP-6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 19.5 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 35 pF
JESD-30 Code R-PDSO-F6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 24 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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