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Transistors / Small Signal Field-Effect Transistors / SSM3K333R
Datasheets
SSM3K333R by:
Toshiba America Electronic Components
Toshiba America Electronic Components
Unisonic Technologies Co Ltd
United Technologies Corporation
Not Found

TRANSISTOR 6000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23F, 2-3Z1A, 3 PIN, FET General Purpose Small Signal

Part Details for SSM3K333R by Toshiba America Electronic Components

Results Overview of SSM3K333R by Toshiba America Electronic Components

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

SSM3K333R Information

SSM3K333R by Toshiba America Electronic Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SSM3K333R

Part # Distributor Description Stock Price Buy
DISTI # SSM3K333R,LF
Avnet Americas Power MOSFET, N Channel, 30 V, 6 A, 28 Milliohms, SOT-23F, 3 Pins, Surface Mount - Tape and Reel (Al... t: SSM3K333R,LF) more RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 18000
  • 3,000 $0.0442
$0.0442 Buy Now
DISTI # SSM3K333R
TME Transistor: N-MOSFET, unipolar, 30V, 6A, 1W, SOT23F Min Qty: 5 4810
  • 5 $0.1440
  • 25 $0.1200
  • 100 $0.1070
  • 500 $0.0950
  • 3,000 $0.0890
$0.0890 / $0.1440 Buy Now

Part Details for SSM3K333R

SSM3K333R CAD Models

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SSM3K333R Part Data Attributes

Parametric Data
SSM3K333R Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
SSM3K333R Toshiba America Electronic Components TRANSISTOR 6000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23F, 2-3Z1A, 3 PIN, FET General Purpose Small Signal
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Part Package Code SOT-23F
Package Description SOT-23F, 2-3Z1A, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Toshiba
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 28 pF
JESD-30 Code R-PDSO-F3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SSM3K333R

This table gives cross-reference parts and alternative options found for SSM3K333R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSM3K333R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SSM3K333R,LF(A Toshiba America Electronic Components Check for Price Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SSM3K333R vs SSM3K333R,LF(A
SSM3K333R(TE85L) Toshiba America Electronic Components Check for Price TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6A I(D),SOT-23VAR SSM3K333R vs SSM3K333R(TE85L)
SSM3K333RG-AE3-R Unisonic Technologies Co Ltd Check for Price Transistor SSM3K333R vs SSM3K333RG-AE3-R
Part Number Manufacturer Composite Price Description Compare
SSM3K333RLF(T Toshiba America Electronic Components Check for Price Small Signal Field-Effect Transistor SSM3K333R vs SSM3K333RLF(T
DMN3042L-7 Diodes Incorporated $0.0787 Small Signal Field-Effect Transistor, SSM3K333R vs DMN3042L-7
TPC6067 Toshiba America Electronic Components Check for Price Nch VDSS≤30V SSM3K333R vs TPC6067
BSO300N03SFUMA1 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8 SSM3K333R vs BSO300N03SFUMA1
SI5468DC-T1-GE3 Vishay Intertechnologies $0.3137 Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8 SSM3K333R vs SI5468DC-T1-GE3

SSM3K333R Related Parts

SSM3K333R Frequently Asked Questions (FAQ)

  • Toshiba recommends a 4-layer PCB with a solid ground plane and a separate power plane for the input and output. The input and output pins should be placed on opposite sides of the board to minimize noise coupling. Additionally, a 10uF ceramic capacitor should be placed close to the input pin to filter out high-frequency noise.

  • The SSM3K333R requires a bias voltage of 2.5V to 5.5V. A voltage regulator or a resistive divider network can be used to generate the bias voltage. The bias pin should be decoupled with a 1uF ceramic capacitor to filter out high-frequency noise.

  • The SSM3K333R can operate from -40°C to 125°C. However, the device's performance may degrade at extreme temperatures. It's recommended to operate the device within the recommended temperature range of -20°C to 85°C for optimal performance.

  • The SSM3K333R has built-in ESD protection, but it's still recommended to take precautions during handling and assembly. Use an ESD wrist strap or mat, and avoid touching the device's pins or exposed metal surfaces. Additionally, use ESD-sensitive packaging and handling procedures during shipping and storage.

  • Toshiba recommends a soldering profile with a peak temperature of 260°C and a dwell time of 10-30 seconds. The device should be soldered using a solder with a melting point of 217°C to 221°C. Avoid using excessive soldering temperature or dwell time, as it may damage the device.