-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
MOSFET P-CH 20V 0.8A VESM
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SSM3J56MFVL3FCT-ND
|
DigiKey | MOSFET P-CH 20V 800MA VESM Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
296224 In Stock |
|
$0.0510 / $0.4200 | Buy Now |
DISTI #
SSM3J56MFV,L3F
|
Avnet Americas | Trans MOSFET P 20V 0.8A 3-Pin SC-105AA - Tape and Reel (Alt: SSM3J56MFV,L3F) RoHS: Compliant Min Qty: 8000 Package Multiple: 8000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.0512 / $0.0612 | Buy Now |
DISTI #
757-SSM3J56MFVL3F
|
Mouser Electronics | MOSFET Small Signal MOSFET RoHS: Compliant | 42891 |
|
$0.0510 / $0.4200 | Buy Now |
DISTI #
V72:2272_13897873
|
Arrow Electronics | Trans MOSFET P-CH Si 20V 0.8A 3-Pin VESM T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2246 Container: Cut Strips | Americas - 17012 |
|
$0.0513 / $0.3866 | Buy Now |
DISTI #
65147888
|
Verical | Trans MOSFET P-CH Si 20V 0.8A 3-Pin VESM T/R RoHS: Compliant Min Qty: 115 Package Multiple: 1 Date Code: 2246 | Americas - 17012 |
|
$0.0513 / $0.1146 | Buy Now |
|
Chip1Cloud | MOSFET P-CH 20V 0.8A VESM | 91800 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SSM3J56MFV,L3F
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
SSM3J56MFV,L3F
Toshiba America Electronic Components
MOSFET P-CH 20V 0.8A VESM
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 0.8 A | |
Drain-source On Resistance-Max | 0.39 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10 pF | |
JESD-30 Code | R-PDSO-F3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.5 W | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |