Part Details for SSM3J375F,LXHF(B by Toshiba America Electronic Components
Results Overview of SSM3J375F,LXHF(B by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SSM3J375F,LXHF(B Information
SSM3J375F,LXHF(B by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SSM3J375F,LXHF(B
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 2967 |
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$0.1880 / $0.9400 | Buy Now |
Part Details for SSM3J375F,LXHF(B
SSM3J375F,LXHF(B CAD Models
SSM3J375F,LXHF(B Part Data Attributes
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SSM3J375F,LXHF(B
Toshiba America Electronic Components
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Datasheet
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SSM3J375F,LXHF(B
Toshiba America Electronic Components
Power Field-Effect Transistor, 2A I(D), 20V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | unknown | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 32 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.6 W | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |