Datasheets
SSH7N60A by:

Power Field-Effect Transistor, 7.3A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Part Details for SSH7N60A by Fairchild Semiconductor Corporation

Overview of SSH7N60A by Fairchild Semiconductor Corporation

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for SSH7N60A

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SSH7N60A Part Data Attributes

SSH7N60A Fairchild Semiconductor Corporation
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SSH7N60A Fairchild Semiconductor Corporation Power Field-Effect Transistor, 7.3A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-3P
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 581 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 7.3 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SSH7N60A

This table gives cross-reference parts and alternative options found for SSH7N60A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSH7N60A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFP70N06 N-Channel Power MOSFET 60V, 70A, 14mΩ, 800-TUBE onsemi SSH7N60A vs RFP70N06
RFP8P06LE Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation SSH7N60A vs RFP8P06LE
RFP2N12L 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC SSH7N60A vs RFP2N12L
RFP45N06_NL 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC SSH7N60A vs RFP45N06_NL
RFG70N06 Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA Harris Semiconductor SSH7N60A vs RFG70N06
RFP70N06 Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SSH7N60A vs RFP70N06
RFP15P06 15A, 60V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation SSH7N60A vs RFP15P06
RFP12N06RLE Power Field-Effect Transistor, 12A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SSH7N60A vs RFP12N06RLE
SPW47N60S5 Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC, TO-247, 3 PIN Infineon Technologies AG SSH7N60A vs SPW47N60S5
SMW70N06-14 Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Vishay Siliconix SSH7N60A vs SMW70N06-14

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