Datasheets
SSG4520H by: Secos Corporation

Power Field-Effect Transistor, 6.6A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MINIATURE, SOP-8

Part Details for SSG4520H by Secos Corporation

Overview of SSG4520H by Secos Corporation

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Applications Security and Surveillance Medical Imaging

Part Details for SSG4520H

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SSG4520H Part Data Attributes

SSG4520H Secos Corporation
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SSG4520H Secos Corporation Power Field-Effect Transistor, 6.6A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MINIATURE, SOP-8
Part Life Cycle Code Active
Ihs Manufacturer SECOS CORP
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6.6 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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