Part Details for SSG4520H by Secos Corporation
Overview of SSG4520H by Secos Corporation
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Applications
Security and Surveillance
Medical Imaging
Part Details for SSG4520H
SSG4520H CAD Models
SSG4520H Part Data Attributes
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SSG4520H
Secos Corporation
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Datasheet
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SSG4520H
Secos Corporation
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MINIATURE, SOP-8
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Part Life Cycle Code | Active | |
Ihs Manufacturer | SECOS CORP | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 6.6 A | |
Drain-source On Resistance-Max | 0.055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |