Part Details for SSG200EF60E by Solid State Devices Inc (SSDI)
Overview of SSG200EF60E by Solid State Devices Inc (SSDI)
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Part Details for SSG200EF60E
SSG200EF60E CAD Models
SSG200EF60E Part Data Attributes
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SSG200EF60E
Solid State Devices Inc (SSDI)
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Datasheet
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SSG200EF60E
Solid State Devices Inc (SSDI)
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MILPACK3-4
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SOLID STATE DEVICES INC | |
| Package Description | CHIP CARRIER, R-CBCC-N4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JESD-30 Code | R-CBCC-N4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | GENERAL PURPOSE SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 900 ns | |
| Turn-on Time-Nom (ton) | 290 ns |