Part Details for SSF7N60B by Fairchild Semiconductor Corporation
Overview of SSF7N60B by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
Automotive
Price & Stock for SSF7N60B
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Rochester Electronics | 5.4A, 600V, 1.2ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 282 |
|
$0.5712 / $0.6720 | Buy Now |
Part Details for SSF7N60B
SSF7N60B CAD Models
SSF7N60B Part Data Attributes:
|
|
SSF7N60B
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
SSF7N60B
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3PF | |
| Package Description | TO-3PF, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 5.4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 86 W | |
| Pulsed Drain Current-Max (IDM) | 21.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |