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Transistors / Power Field-Effect Transistors / SQS460EN-T1_GE3
Datasheets
SQS460EN-T1_GE3 by:

Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Part Details for SQS460EN-T1_GE3 by Vishay Intertechnologies

Overview of SQS460EN-T1_GE3 by Vishay Intertechnologies

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Applications Industrial Automation Energy and Power Systems Renewable Energy Robotics and Drones

Price & Stock for SQS460EN-T1_GE3

Part # Distributor Description Stock Price Buy
DISTI # 61AC2037
Newark Mosfet, N-Ch, 60V, Powerpak-1212, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.03Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Vishay SQS460EN-T1_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $1.3700
  • 10 $1.1400
  • 25 $1.0600
  • 50 $0.9840
  • 100 $0.9040
$0.9040 / $1.3700 Buy Now
DISTI # 76Y1598
Newark N-Channel 60-V (D-S) 175C Mosfet |Vishay SQS460EN-T1_GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.5830
  • 4,000 $0.5240
  • 6,000 $0.5050
  • 10,000 $0.4940
$0.4940 / $0.5830 Buy Now
DISTI # SQS460EN-T1_GE3
Avnet Americas Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SQS460EN-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 30000
  • 3,000 $0.5272
  • 6,000 $0.5198
  • 12,000 $0.5124
  • 18,000 $0.5050
  • 24,000 $0.4938
  • 30,000 $0.4864
  • 300,000 $0.4790
$0.4790 / $0.5272 Buy Now
DISTI # 78-SQS460EN-T1_GE3
Mouser Electronics MOSFET 60V 8A 39W AEC-Q101 Qualified RoHS: Compliant 86690
  • 1 $1.2400
  • 10 $1.0100
  • 100 $0.7880
  • 500 $0.6680
  • 1,000 $0.5440
  • 3,000 $0.5060
  • 6,000 $0.4870
  • 9,000 $0.4650
$0.4650 / $1.2400 Buy Now
Future Electronics Single N-Channel 60 V 0.040 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4900
  • 6,000 $0.4800
  • 9,000 $0.4700
$0.4700 / $0.4900 Buy Now
Future Electronics Single N-Channel 60 V 0.040 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4900
  • 6,000 $0.4800
  • 9,000 $0.4700
$0.4700 / $0.4900 Buy Now
Quest Components   17
  • 1 $1.6450
  • 4 $1.3160
  • 16 $0.8225
$0.8225 / $1.6450 Buy Now
DISTI # SQS460EN-T1_GE3
Avnet Asia Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK 1212 T/R (Alt: SQS460EN-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days 0
  • 3,000 $0.6042
  • 6,000 $0.5958
  • 9,000 $0.5877
  • 15,000 $0.5797
  • 30,000 $0.5645
  • 75,000 $0.5500
  • 150,000 $0.5363
$0.5363 / $0.6042 Buy Now

Part Details for SQS460EN-T1_GE3

SQS460EN-T1_GE3 CAD Models

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SQS460EN-T1_GE3 Part Data Attributes:

Parametric Data
SQS460EN-T1_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQS460EN-T1_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, S-XDSO-C5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 16 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 65 pF
JESD-30 Code S-PDSO-F8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 39 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
Turn-off Time-Max (toff) 40 ns
Turn-on Time-Max (ton) 20 ns

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