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Part Details for SQS411ENW-T1_GE3 by Vishay Intertechnologies
Overview of SQS411ENW-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SQS411ENW-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
21AH4482
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Newark | Mosfet, Aec-Q101, P-Ch, -30V, -16A, 53.6W Rohs Compliant: Yes |Vishay SQS411ENW-T1_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4968 |
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$0.6220 / $1.0000 | Buy Now |
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DISTI #
81AC3520
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Newark | P-Channel 40-V (D-S) 175C Mosfet |Vishay SQS411ENW-T1_GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3170 / $0.4220 | Buy Now |
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DISTI #
SQS411ENW-T1_GE3
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Avnet Americas | Transistor MOSFET P-CH 30V 16A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SQS411ENW-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.4345 | Buy Now |
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DISTI #
78-SQS411ENW-T1_GE3
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Mouser Electronics | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W RoHS: Compliant | 19086 |
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$0.2990 / $0.8200 | Buy Now |
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Future Electronics | Trans MOSFET P-CH 40V 16A Automotive 8-Pin PowerPAK 1212-W EP T/R RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.3050 / $0.3250 | Buy Now |
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Future Electronics | Trans MOSFET P-CH 40V 16A Automotive 8-Pin PowerPAK 1212-W EP T/R RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.3050 / $0.3250 | Buy Now |
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DISTI #
SQS411ENW-T1_GE3
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Avnet Asia | Transistor MOSFET P-CH 30V 16A 8-Pin PowerPAK 1212 (Alt: SQS411ENW-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | 0 |
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RFQ |
Part Details for SQS411ENW-T1_GE3
SQS411ENW-T1_GE3 CAD Models
SQS411ENW-T1_GE3 Part Data Attributes:
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SQS411ENW-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQS411ENW-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 16A I(D), 40V, 0.0273ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 18 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.0273 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 187 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 39.5 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 59.9 ns | |
| Turn-on Time-Max (ton) | 17.6 ns |