-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SQM70060EL_GE3
|
Avnet Americas | Trans MOSFET N-CH 100V 75A 3-Pin TO-263 T/R - Tape and Reel (Alt: SQM70060EL_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
|
$1.1663 / $1.4816 | Buy Now |
DISTI #
78-SQM70060EL_GE3
|
Mouser Electronics | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified RoHS: Compliant | 29569 |
|
$1.1100 / $2.4100 | Buy Now |
DISTI #
V72:2272_17600313
|
Arrow Electronics | Trans MOSFET N-CH 100V 75A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 40 Weeks Date Code: 2409 Container: Cut Strips | Americas - 800 |
|
$1.1595 / $1.9806 | Buy Now |
|
Future Electronics | P-CHANNEL 100-V (D-S) 175C MOSFET RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 28 Weeks Container: Reel | 0Reel |
|
$1.1000 / $1.1600 | Buy Now |
DISTI #
78821501
|
Verical | Trans MOSFET N-CH 100V 75A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 6 Package Multiple: 1 Date Code: 2409 | Americas - 800 |
|
$1.1595 / $1.9806 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SQM70060EL_GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SQM70060EL_GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 28 Weeks | |
Date Of Intro | 2016-07-19 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 67 A | |
Drain-source On Resistance-Max | 0.0059 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |