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Power Field-Effect Transistor, 30A I(D), 80V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8L, 4 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10AC9128
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Newark | Mosfet, Aec-Q101, N-Ch, 80V, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0155Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Vishay SQJA86EP-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 12316 |
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$0.7250 / $1.0900 | Buy Now |
DISTI #
20AC3990
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Newark | N-Channel 80-V (D-S) 175C Mosfet |Vishay SQJA86EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4060 / $0.4790 | Buy Now |
DISTI #
SQJA86EP-T1_GE3
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Avnet Americas | MOSFET N-Channel Automotive 80V 30A 4-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJA86EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
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$0.3743 | Buy Now |
DISTI #
78-SQJA86EP-T1_GE3
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Mouser Electronics | MOSFETs 80V Vds 30A Id AEC-Q101 Qualified RoHS: Compliant | 9171 |
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$0.4360 / $1.1000 | Buy Now |
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Future Electronics | SQJA86EP Series 80 V 30 A Automotive N-Channel Mosfet - PowerPAK® SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4000 / $0.4200 | Buy Now |
DISTI #
SQJA86EP-T1_GE3
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Avnet Asia | MOSFET N-Channel Automotive 80V 30A 4-Pin PowerPAK SO T/R (Alt: SQJA86EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 42 Weeks, 0 Days | 0 |
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RFQ | |
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CHIPMALL.COM LIMITED | Package/EnclosurePowerPAK SO-8 fet typeN-Channel Operating temperature-55~175 Drain-source voltage Vds80V Continuous Drain Current Id30ATc | 3380 |
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$0.5086 | Buy Now |
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SQJA86EP-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQJA86EP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 30A I(D), 80V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8L, 4 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 25 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.019 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 35 pF | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 84 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 80 ns | |
Turn-on Time-Max (ton) | 30 ns |