Datasheets
SQJA86EP-T1_GE3 by:

Power Field-Effect Transistor, 30A I(D), 80V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8L, 4 PIN

Part Details for SQJA86EP-T1_GE3 by Vishay Intertechnologies

Overview of SQJA86EP-T1_GE3 by Vishay Intertechnologies

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Applications Space Technology Industrial Automation Aerospace and Defense Telecommunications

Price & Stock for SQJA86EP-T1_GE3

Part # Distributor Description Stock Price Buy
DISTI # 10AC9128
Newark Mosfet, Aec-Q101, N-Ch, 80V, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0155Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Vishay SQJA86EP-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 12316
  • 1 $1.0900
  • 10 $0.9090
  • 25 $0.8480
  • 50 $0.7860
  • 100 $0.7250
$0.7250 / $1.0900 Buy Now
DISTI # 20AC3990
Newark N-Channel 80-V (D-S) 175C Mosfet |Vishay SQJA86EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.4790
  • 4,000 $0.4300
  • 6,000 $0.4150
  • 10,000 $0.4060
$0.4060 / $0.4790 Buy Now
DISTI # SQJA86EP-T1_GE3
Avnet Americas MOSFET N-Channel Automotive 80V 30A 4-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJA86EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3743
$0.3743 Buy Now
DISTI # 78-SQJA86EP-T1_GE3
Mouser Electronics MOSFETs 80V Vds 30A Id AEC-Q101 Qualified RoHS: Compliant 9171
  • 1 $1.1000
  • 10 $0.8810
  • 100 $0.6570
  • 500 $0.5250
  • 1,000 $0.4700
  • 3,000 $0.4360
$0.4360 / $1.1000 Buy Now
Future Electronics SQJA86EP Series 80 V 30 A Automotive N-Channel Mosfet - PowerPAK® SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4200
  • 6,000 $0.4100
  • 9,000 $0.4050
  • 12,000 $0.4000
$0.4000 / $0.4200 Buy Now
DISTI # SQJA86EP-T1_GE3
Avnet Asia MOSFET N-Channel Automotive 80V 30A 4-Pin PowerPAK SO T/R (Alt: SQJA86EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 42 Weeks, 0 Days 0
RFQ
CHIPMALL.COM LIMITED Package/EnclosurePowerPAK SO-8 fet typeN-Channel Operating temperature-55~175 Drain-source voltage Vds80V Continuous Drain Current Id30ATc 3380
  • 3,000 $0.5086
$0.5086 Buy Now

Part Details for SQJA86EP-T1_GE3

SQJA86EP-T1_GE3 CAD Models

SQJA86EP-T1_GE3 Part Data Attributes

SQJA86EP-T1_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQJA86EP-T1_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 30A I(D), 80V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8L, 4 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 25 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 35 pF
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 84 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 30 ns

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