Datasheets
SQD100N04-3M6_GE3 by:

Power Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2

Part Details for SQD100N04-3M6_GE3 by Vishay Intertechnologies

Overview of SQD100N04-3M6_GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SQD100N04-3M6_GE3

Part # Distributor Description Stock Price Buy
DISTI # 26AK5819
Newark Mosfet, N-Ch, 40V, 100A, To-252Aa Rohs Compliant: Yes |Vishay SQD100N04-3M6_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1998
  • 1 $1.5900
  • 10 $1.3200
  • 25 $1.2300
  • 50 $1.1400
  • 100 $1.0500
$1.0500 / $1.5900 Buy Now
DISTI # SQD100N04-3M6_GE3
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin TO-252 - Tape and Reel (Alt: SQD100N04-3M6_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.6381
$0.6381 Buy Now
DISTI # 78-SQD100N04-3M6_GE3
Mouser Electronics MOSFETs N-Channel 40V AEC-Q101 Qualified RoHS: Compliant 1174
  • 1 $1.5400
  • 10 $1.2800
  • 100 $1.0200
  • 250 $0.9440
  • 500 $0.8570
  • 1,000 $0.7340
  • 2,000 $0.6980
  • 4,000 $0.6710
  • 10,000 $0.6560
$0.6560 / $1.5400 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks 0
  • 2,000 $0.6840
$0.6840 Buy Now
DISTI # SQD100N04-3M6_GE3
EBV Elektronik Trans MOSFET N-CH 40V 100A 3-Pin TO-252 (Alt: SQD100N04-3M6_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SQD100N04-3M6_GE3

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SQD100N04-3M6_GE3 Part Data Attributes

SQD100N04-3M6_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQD100N04-3M6_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 100A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 192 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SQD100N04-3M6_GE3

This table gives cross-reference parts and alternative options found for SQD100N04-3M6_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQD100N04-3M6_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SQD100N04-3M6L_GE3 Power Field-Effect Transistor, 100A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 Vishay Intertechnologies SQD100N04-3M6_GE3 vs SQD100N04-3M6L_GE3

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