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Transistors / Power Field-Effect Transistors / SQ7414CENW-T1_GE3
Datasheets
SQ7414CENW-T1_GE3 by:

Power Field-Effect Transistor, 18A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for SQ7414CENW-T1_GE3 by Vishay Intertechnologies

Overview of SQ7414CENW-T1_GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SQ7414CENW-T1_GE3

Part # Distributor Description Stock Price Buy
DISTI # 61AC8304
Newark Mosfet, N-Ch, 60V, 18A, 175Deg C, 62W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SQ7414CENW-T1_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 550
  • 1 $0.9540
  • 10 $0.7910
  • 25 $0.7400
  • 50 $0.6900
  • 100 $0.6390
$0.6390 / $0.9540 Buy Now
DISTI # 79AH6783
Newark N-Channel 60-V (D-S) 175C Mosfet |Vishay SQ7414CENW-T1_GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.5010
$0.5010 Buy Now
DISTI # 81AC3522
Newark N-Channel 60-V (D-S) 175C Mosfet |Vishay SQ7414CENW-T1_GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.4860
  • 5,000 $0.4750
  • 10,000 $0.4390
  • 20,000 $0.4090
  • 30,000 $0.3810
  • 50,000 $0.3650
$0.3650 / $0.4860 Buy Now
DISTI # SQ7414CENW-T1_GE3
Avnet Americas Transistor MOSFET N-CH 60V 18A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SQ7414CENW-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5003
$0.5003 Buy Now
DISTI # 61AC8304
Avnet Americas Transistor MOSFET N-CH 60V 18A 8-Pin PowerPAK 1212 - Product that comes on tape, but is not reeled (Alt: 61AC8304) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 0 Days Container: Ammo Pack 550 Partner Stock
  • 1 $0.9550
  • 10 $0.7920
  • 25 $0.7420
  • 50 $0.6910
  • 100 $0.6400
$0.6400 / $0.9550 Buy Now
DISTI # 78-SQ7414CENW-T1_GE3
Mouser Electronics MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W RoHS: Compliant 87637
  • 1 $0.9200
  • 10 $0.7360
  • 100 $0.5860
  • 500 $0.4960
  • 1,000 $0.4050
  • 3,000 $0.3800
  • 6,000 $0.3620
  • 9,000 $0.3460
$0.3460 / $0.9200 Buy Now
Future Electronics MOSFET N-CH 60V PPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.3650
  • 6,000 $0.3600
  • 9,000 $0.3550
  • 12,000 $0.3500
$0.3500 / $0.3650 Buy Now
Future Electronics MOSFET N-CH 60V PPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.3650
  • 6,000 $0.3600
  • 9,000 $0.3550
  • 12,000 $0.3500
$0.3500 / $0.3650 Buy Now
DISTI # SQ7414CENW-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 60V, 18A, Idm: 72A, 62W Min Qty: 1 0
  • 1 $0.8120
  • 50 $0.6010
  • 100 $0.5230
$0.5230 / $0.8120 RFQ
DISTI # SMC-SQ7414CENW-T1_GE3
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 20210607 307
RFQ
Chip 1 Exchange INSTOCK 23400
RFQ
DISTI # SQ7414CENW-T1_GE3
Avnet Asia Transistor MOSFET N-CH 60V 18A 8-Pin PowerPAK 1212 (Alt: SQ7414CENW-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days 0
RFQ
Wuhan P&S 60V,23m��,18A,N-Channel Power MOSFET Min Qty: 1 18000
  • 1 $4.5100
  • 100 $1.5100
  • 500 $1.4000
  • 1,000 $1.3600
$1.3600 / $4.5100 Buy Now

Part Details for SQ7414CENW-T1_GE3

SQ7414CENW-T1_GE3 CAD Models

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SQ7414CENW-T1_GE3 Part Data Attributes:

Parametric Data
SQ7414CENW-T1_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQ7414CENW-T1_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 18A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, S-PDSO-F5
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 16 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SQ7414CENW-T1_GE3

This table gives cross-reference parts and alternative options found for SQ7414CENW-T1_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQ7414CENW-T1_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
YJG20N06AF1 Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN5X6, 8 PIN Yangzhou Yangjie Electronics Co Ltd SQ7414CENW-T1_GE3 vs YJG20N06AF1
YJG20N06A Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN5X6, 8 PIN Yangzhou Yangjie Electronics Co Ltd SQ7414CENW-T1_GE3 vs YJG20N06A

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