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Part Details for SQ4153EY-T1_GE3 by Vishay Intertechnologies
Overview of SQ4153EY-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SQ4153EY-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQ4153EY-T1_GE3
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Avnet Americas | MOSFET P-Channel Automotive 12V 25A 8-Pin SOIC T/R - Tape and Reel (Alt: SQ4153EY-T1_GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.5591 / $0.6282 | Buy Now |
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DISTI #
78-SQ4153EY-T1_GE3
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Mouser Electronics | MOSFETs P Ch -12Vds 8Vgs AEC-Q101 Qualified RoHS: Compliant | 40602 |
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$0.5930 / $1.5800 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks | 0 |
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$0.6260 | Buy Now |
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DISTI #
SQ4153EY-T1-GE3
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TME | Transistor: P-MOSFET, unipolar, -12V, -14A, 2.3W, SO8 Min Qty: 1 | 2436 |
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$1.2200 / $1.8400 | Buy Now |
Part Details for SQ4153EY-T1_GE3
SQ4153EY-T1_GE3 CAD Models
SQ4153EY-T1_GE3 Part Data Attributes
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SQ4153EY-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQ4153EY-T1_GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 25A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MS-012, SOIC-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 18 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.00832 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3600 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 788 ns | |
| Turn-on Time-Max (ton) | 266 ns |