Part Details for SPW35N60C3 by Infineon Technologies AG
Overview of SPW35N60C3 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SPW35N60C3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-SPW35N60C3
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Mouser Electronics | MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 RoHS: Compliant | 7 |
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$7.4400 / $11.0800 | Buy Now |
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | 34.6 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA | 20 |
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$8.3700 / $11.1600 | Buy Now |
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DISTI #
SPW35N60C3
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TME | Transistor: N-MOSFET, unipolar, 650V, 21.9A, 313W, PG-TO247-3 Min Qty: 1 | 41 |
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$10.6100 / $13.5900 | Buy Now |
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Ameya Holding Limited | Min Qty: 8 | 105 |
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$12.2584 / $12.6369 | Buy Now |
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Sense Electronic Company Limited | TO-247 | 955 |
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RFQ |
Part Details for SPW35N60C3
SPW35N60C3 CAD Models
SPW35N60C3 Part Data Attributes:
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SPW35N60C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPW35N60C3
Infineon Technologies AG
Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AA | |
| Package Description | GREEN, PLASTIC, TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 34.6 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 313 W | |
| Pulsed Drain Current-Max (IDM) | 103.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPW35N60C3
This table gives cross-reference parts and alternative options found for SPW35N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW35N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPP60R099C6 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | SPW35N60C3 vs IPP60R099C6 |
| STW47NM60ND | Automotive-grade N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package | STMicroelectronics | SPW35N60C3 vs STW47NM60ND |
| STW43NM60NDD | 35A, 600V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN | STMicroelectronics | SPW35N60C3 vs STW43NM60NDD |
| IPW60R099C6FKSA1 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPW35N60C3 vs IPW60R099C6FKSA1 |
| IPW60R099C6XK | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPW35N60C3 vs IPW60R099C6XK |
| IPW60R099C6 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPW35N60C3 vs IPW60R099C6 |
| R6035ENZ1C9 | Power Field-Effect Transistor, 35A I(D), 600V, 0.102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | ROHM Semiconductor | SPW35N60C3 vs R6035ENZ1C9 |