Part Details for SPU07N60C3BKMA1 by Infineon Technologies AG
Overview of SPU07N60C3BKMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPU07N60C3BKMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | SPU07N60 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 787 |
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$0.7833 / $0.9215 | Buy Now |
Part Details for SPU07N60C3BKMA1
SPU07N60C3BKMA1 CAD Models
SPU07N60C3BKMA1 Part Data Attributes:
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SPU07N60C3BKMA1
Infineon Technologies AG
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Datasheet
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SPU07N60C3BKMA1
Infineon Technologies AG
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-251AA | |
Package Description | GREEN, PLASTIC, TO-251, IPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 7.3 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 21.9 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SPU07N60C3BKMA1
This table gives cross-reference parts and alternative options found for SPU07N60C3BKMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPU07N60C3BKMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SIHP7N60E-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SPU07N60C3BKMA1 vs SIHP7N60E-E3 |
IRFS11N50A | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | SPU07N60C3BKMA1 vs IRFS11N50A |
IRFS11N50A | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | SPU07N60C3BKMA1 vs IRFS11N50A |
AP07S60H-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | SPU07N60C3BKMA1 vs AP07S60H-HF |
IRFS11N50A | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | SPU07N60C3BKMA1 vs IRFS11N50A |
SIHFS11N50A-GE3 | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Intertechnologies | SPU07N60C3BKMA1 vs SIHFS11N50A-GE3 |
SIHP7N60E-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SPU07N60C3BKMA1 vs SIHP7N60E-GE3 |
AP07S60J-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | SPU07N60C3BKMA1 vs AP07S60J-HF |
SPB07N60S5-E3045A | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPU07N60C3BKMA1 vs SPB07N60S5-E3045A |
IRFS11N50ATRL | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | SPU07N60C3BKMA1 vs IRFS11N50ATRL |