There are no models available for this part yet.
Overview of SPU07N60C3 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SPU07N60C3 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
C1S322000117974
|
Chip1Stop | Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-251 Tube RoHS: Compliant pbFree: Yes | 68 |
|
$3.9000 | Buy Now |
CAD Models for SPU07N60C3 by Infineon Technologies AG
Part Data Attributes for SPU07N60C3 by Infineon Technologies AG
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Part Package Code
|
TO-251AA
|
Package Description
|
GREEN, PLASTIC, TO-251, IPAK-3
|
Pin Count
|
3
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Infineon
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
230 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
7.3 A
|
Drain-source On Resistance-Max
|
0.6 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-251AA
|
JESD-30 Code
|
R-PSIP-T3
|
JESD-609 Code
|
e3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
83 W
|
Pulsed Drain Current-Max (IDM)
|
21.9 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
Matte Tin (Sn)
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for SPU07N60C3
This table gives cross-reference parts and alternative options found for SPU07N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPU07N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFS11N50A | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | SPU07N60C3 vs IRFS11N50A |
AP07S60J-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | SPU07N60C3 vs AP07S60J-HF |
IRFS11N50ATRRPBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | SPU07N60C3 vs IRFS11N50ATRRPBF |
IRFS11N50ATRL | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | SPU07N60C3 vs IRFS11N50ATRL |
STB10NB50T4 | 10.6A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | STMicroelectronics | SPU07N60C3 vs STB10NB50T4 |
SPI07N60C3XKSA1 | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPU07N60C3 vs SPI07N60C3XKSA1 |
IRFS11N50APBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | Vishay Intertechnologies | SPU07N60C3 vs IRFS11N50APBF |
IRFS11N50ATRRP | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | SPU07N60C3 vs IRFS11N50ATRRP |
IRFS11N50A | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | SPU07N60C3 vs IRFS11N50A |
SPB07N60S5-E3045A | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPU07N60C3 vs SPB07N60S5-E3045A |
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