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Transistors / Power Field-Effect Transistors / SPP04N80C3
Datasheets
SPP04N80C3 by: Infineon Technologies AG

Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for SPP04N80C3 by Infineon Technologies AG

Overview of SPP04N80C3 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SPP04N80C3

Part # Distributor Description Stock Price Buy
DISTI # 726-SPP04N80C3
Mouser Electronics MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3 RoHS: Compliant 511
  • 1 $1.6500
  • 10 $1.3700
  • 100 $1.0900
  • 250 $1.0400
  • 500 $0.8770
  • 1,000 $0.7810
  • 2,500 $0.7410
  • 5,000 $0.7140
  • 10,000 $0.6970
$0.6970 / $1.6500 Buy Now
Bristol Electronics   200
RFQ
DISTI # SPP04N80C3
TME Transistor: N-MOSFET, unipolar, 800V, 4A, 63W, PG-TO220-3 Min Qty: 1 0
  • 1 $1.7500
  • 3 $1.5600
  • 10 $1.4000
  • 50 $1.3000
  • 250 $1.2200
$1.2200 / $1.7500 RFQ
LCSC 800V 4A 1.310V2.5A 63W 3.9V240uA 1PCSNChannel TO-220 MOSFETs ROHS 1
  • 1 $1.0684
  • 10 $0.8974
  • 50 $0.8038
  • 100 $0.6986
  • 500 $0.6518
  • 1,000 $0.6314
$0.6314 / $1.0684 Buy Now

Part Details for SPP04N80C3

SPP04N80C3 CAD Models

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SPP04N80C3 Part Data Attributes:

Parametric Data
SPP04N80C3 Infineon Technologies AG
Buy Now Datasheet
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SPP04N80C3 Infineon Technologies AG Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Description Infineon SPP04N80C3 N-channel MOSFET Transistor, 4 A, 800 V, 3-Pin TO-220
Samacsys Manufacturer Infineon
Samacsys Modified On 2023-03-07 16:10:32
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas) 170 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 1.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 63 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPP04N80C3

This table gives cross-reference parts and alternative options found for SPP04N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP04N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF610B_FP001 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation SPP04N80C3 vs IRF610B_FP001
FDP18N50 Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation SPP04N80C3 vs FDP18N50
PHD3055L 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors SPP04N80C3 vs PHD3055L
STH8NA60 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics SPP04N80C3 vs STH8NA60
STD3NA50T4 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics SPP04N80C3 vs STD3NA50T4
IPP45N06S4L-08 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPP04N80C3 vs IPP45N06S4L-08
934057024118 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 NXP Semiconductors SPP04N80C3 vs 934057024118
IRF620B Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation SPP04N80C3 vs IRF620B
SPP80N06S2L-06 Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPP04N80C3 vs SPP80N06S2L-06
STP75NF75 N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package STMicroelectronics SPP04N80C3 vs STP75NF75

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