Part Details for SPP04N60C2 by Infineon Technologies AG
Overview of SPP04N60C2 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPP04N60C2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-SPP04N60C2-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 799 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
19000 In Stock |
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$0.3800 | Buy Now |
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Rochester Electronics | SPP04N60 - CoolMOS N-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 19000 |
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$0.3223 / $0.3792 | Buy Now |
Part Details for SPP04N60C2
SPP04N60C2 CAD Models
SPP04N60C2 Part Data Attributes
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SPP04N60C2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP04N60C2
Infineon Technologies AG
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SFM | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 9 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPP04N60C2
This table gives cross-reference parts and alternative options found for SPP04N60C2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP04N60C2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STH8NA60 | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | SPP04N60C2 vs STH8NA60 |
| IPP45N06S4L-08 | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPP04N60C2 vs IPP45N06S4L-08 |
| STH8NA80FI | 4.5A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT218, 3 PIN | STMicroelectronics | SPP04N60C2 vs STH8NA80FI |
| IXTH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | SPP04N60C2 vs IXTH14N80 |
| STD7NM60N | N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK package | STMicroelectronics | SPP04N60C2 vs STD7NM60N |
| STD1NB60-1 | 1A, 600V, 8.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | STMicroelectronics | SPP04N60C2 vs STD1NB60-1 |
| SSP5N90 | Power Field-Effect Transistor, 5A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | SPP04N60C2 vs SSP5N90 |
| STD1NA60T4 | 1.6A, 600V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | STMicroelectronics | SPP04N60C2 vs STD1NA60T4 |
| FQP5N40 | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | SPP04N60C2 vs FQP5N40 |
| 2SK3512-01S | Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 | Fuji Electric Co Ltd | SPP04N60C2 vs 2SK3512-01S |