Part Details for SPI15N65C3 by Infineon Technologies AG
Results Overview of SPI15N65C3 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SPI15N65C3 Information
SPI15N65C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for SPI15N65C3
SPI15N65C3 CAD Models
SPI15N65C3 Part Data Attributes
|
|
SPI15N65C3
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SPI15N65C3
Infineon Technologies AG
Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-262AA | |
| Package Description | GREEN, PLASTIC, TO-262, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 460 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPI15N65C3
This table gives cross-reference parts and alternative options found for SPI15N65C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPI15N65C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP19NM65N | STMicroelectronics | Check for Price | 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | SPI15N65C3 vs STP19NM65N |
| SPW15N60C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN | SPI15N65C3 vs SPW15N60C3 |
| FCA16N60_F109 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | SPI15N65C3 vs FCA16N60_F109 |
| SPA15N65C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | SPI15N65C3 vs SPA15N65C3 |
| SPP15N60C3HKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPI15N65C3 vs SPP15N60C3HKSA1 |
| SIHB15N60E-GE3 | Vishay Intertechnologies | $2.4548 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | SPI15N65C3 vs SIHB15N60E-GE3 |
| SPP15N60C3XK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPI15N65C3 vs SPP15N60C3XK |
| SIHB15N65E-GE3 | Vishay Intertechnologies | $2.8413 | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | SPI15N65C3 vs SIHB15N65E-GE3 |
| STI19NM65N | STMicroelectronics | Check for Price | 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | SPI15N65C3 vs STI19NM65N |
SPI15N65C3 Frequently Asked Questions (FAQ)
-
The maximum operating frequency of the SPI15N65C3 is 100 kHz, but it can be operated at higher frequencies with proper PCB design and layout considerations.
-
To ensure the MOSFET is fully turned on, the gate-source voltage (VGS) should be at least 10V, and the gate current (IG) should be sufficient to charge the gate capacitance quickly.
-
The maximum power dissipation of the SPI15N65C3 is dependent on the ambient temperature and the thermal resistance of the package. Refer to the thermal derating curve in the datasheet to determine the maximum power dissipation for a given temperature.
-
To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and a current sense resistor or a fuse to detect and limit the current.
-
The recommended PCB layout for the SPI15N65C3 includes a solid ground plane, a separate power plane for the drain voltage, and a Kelvin connection for the source pin to minimize parasitic inductance and resistance.