Part Details for SPI08N80C3 by Infineon Technologies AG
Results Overview of SPI08N80C3 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SPI08N80C3 Information
SPI08N80C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPI08N80C3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Discontinued | 2447 |
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RFQ |
Part Details for SPI08N80C3
SPI08N80C3 CAD Models
SPI08N80C3 Part Data Attributes
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SPI08N80C3
Infineon Technologies AG
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Datasheet
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SPI08N80C3
Infineon Technologies AG
Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-262AA | |
| Package Description | Rohs Compliant, Plastic, To-262, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | Avalanche Rated, High Voltage | |
| Avalanche Energy Rating (Eas) | 340 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for SPI08N80C3
This table gives cross-reference parts and alternative options found for SPI08N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPI08N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPI08N80C3XK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN | SPI08N80C3 vs SPI08N80C3XK |
| SPI08N80C3XKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN | SPI08N80C3 vs SPI08N80C3XKSA1 |
SPI08N80C3 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the SPI08N80C3 is 100 kHz, but it can be operated at higher frequencies with reduced voltage and current ratings.
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To ensure reliability in high-temperature applications, it is recommended to derate the voltage and current ratings of the SPI08N80C3 according to the datasheet, and to use a suitable thermal management system to keep the junction temperature below 150°C.
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Yes, the SPI08N80C3 can be used in switching applications, but it is essential to ensure that the device is operated within its safe operating area (SOA) to prevent damage. The SOA is defined by the maximum voltage, current, and power dissipation ratings.
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To protect the SPI08N80C3 from ESD, it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and to ensure that the device is stored in an anti-static package.
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Yes, the SPI08N80C3 can be used in a parallel configuration to increase the current rating, but it is essential to ensure that the devices are matched and that the current sharing is balanced to prevent overheating and damage.