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Transistors Power Field-Effect Transistors SPI08N80C3

Transistors
SPI08N80C3
Infineon Technologies AG
Description: Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

Overview of SPI08N80C3 by Infineon Technologies AG

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 2 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for SPI08N80C3 by Infineon Technologies AG
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Part Data Attributes for SPI08N80C3 by Infineon Technologies AG
Parametric Data

SPI08N80C3
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TO-262AA
Package Description
ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas)
340 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
Drain Current-Max (ID)
8 A
Drain-source On Resistance-Max
0.65 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
104 W
Pulsed Drain Current-Max (IDM)
24 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SPI08N80C3
    Infineon Technologies AG
    Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
    VS

Alternate Parts for SPI08N80C3

This table gives cross-reference parts and alternative options found for SPI08N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPI08N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SPI08N80C3XK Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN Infineon Technologies AG SPI08N80C3 vs SPI08N80C3XK
SPP08N80C3XKSA1 Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPI08N80C3 vs SPP08N80C3XKSA1

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