Part Details for SPD50N03S207GBTMA1 by Infineon Technologies AG
Overview of SPD50N03S207GBTMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SPD50N03S207GBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SPD50N03S207GBTMA1
|
Avnet Americas | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: SPD50N03S207GBTMA1) RoHS: Compliant Min Qty: 569 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 7456 Partner Stock |
|
$0.5454 / $0.6417 | Buy Now |
|
|
Rochester Electronics | SPD50N03 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2480 |
|
$0.5454 / $0.6417 | Buy Now |
|
DISTI #
SPD50N03S207GBTMA1
|
TME | Transistor: N-MOSFET, unipolar, 30V, 50A, 136W, PG-TO252-3 Min Qty: 1 | 1477 |
|
$0.6700 / $0.9100 | Buy Now |
Part Details for SPD50N03S207GBTMA1
SPD50N03S207GBTMA1 CAD Models
SPD50N03S207GBTMA1 Part Data Attributes
|
|
SPD50N03S207GBTMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SPD50N03S207GBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3/2 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0073 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |